Datasheet > FLM0910-15F

FLM0910-15F

更新时间： 2024-11-15 03:37:07

品牌	Logo	应用领域
EUDYNA		/
页数	文件大小	规格书
5页	110K
描述
X-Band Internally Matched FET

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技术参数
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FLM0910-15F 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
针数：	4	Reach Compliance Code：	unknown
风险等级：	5.04	Base Number Matches：	1

FLM0910-15F 数据手册

FLM0910-15F

X-Band Internally Matched FET

FEATURES

・High Output Power: P1dB=42.0dBm(Typ.)

・High Gain: G1dB=7.5dB(Typ.)

・High PAE: hadd=32%(Typ.)

・Broad Band: 9.5~10.5GHz

・Impedance Matched Zin/Zout = 50W

・Hermetically Sealed Package

DESCRIPTION

The FLM0910-15F is a power GaAs FET that is internally matched

for standard communication bands to provide optimum power and

gain in a 50W system.

ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^oC)

Symbol

V_DS

V_GS

P_T

Unit

Item

Rating

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

-5

57.7

^oC

T_stg

-65 to +175

175

T_ch

RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^oC)

Item

Symbol

Unit

Condition

Lim it

V_DS

DC Input Voltage

Forw ard Gate Current

Reverse Gate Current

≦

R_G=50 ohm

16.7

I_GF

≦

-3.62

I_GR

≧

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)

Lim it

Typ.

7.2

4500

-1.5

Item

Symbol

Condition

Unit

Min.

Max.

10.8

I_DSS

g_m

V_DS=5V , V_GS=0V

V_DS=5V , I_DS=3.5A

V_DS=5V , I_DS=300mA

I_GS=-300uA

Drain Current

Trans conductance

V_p

-0.5

-3.0

Pinch-off Voltage

V_GSO

P_1dB

G_1dB

I_dsr

-5.0

Gate-Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Drain Current

41.0

42.0

7.5

4.0

dBm

V_DS=10V

I_DS=0.5I_DSS(typ.)

6.5

5.0

f= 9.5 ~ 10.5 GHz

Zs=Z_L=50 ohm

N_add

Power-added Efficiency

Gain Flatness

1.2

2.6

100

^oC/W

^oC

R_th

Channel to Case

10V x I_dsrX R_th

2.3

Therm al Resistance

Channel Temperature Rise

T_ch

G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Lev el

CASE STYLE : IB

ESD

Class III

2000V ~

ꢀ

Edition 1.1

May 2005

12 3 4 5

中文翻译

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