Datasheet > FGD4536TM

FGD4536TM

更新时间： 2024-02-21 05:28:53

品牌	Logo	应用领域
安森美 - ONSEMI		栅瞄准线双极性晶体管功率控制光电二极管
页数	文件大小	规格书
9页	1294K
描述
360 V PDP Trench IGBT

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中文翻译

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技术参数
数据手册

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FGD4536TM 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
风险等级：	5.71	Is Samacsys：	N
JESD-609代码：	e3	湿度敏感等级：	1
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Tin (Sn)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

FGD4536TM 数据手册

FGD4536

360 V PDP Trench IGBT

Features

General Description

•

High Current Capability

Low Saturation Voltage: V

High Input Impedance

Fast Switching

Using novel trench IGBT technology, ON Semiconductor’s new

series of trench IGBTs offer the optimum performance for

consumer appliances and PDP TV applications where low

conduction and switching losses are essential.

= 1.59 V @ I = 50 A

CE(sat)

RoHS Compliant

Applications

•

PDP TV, Consumer Appliances

TO-252/D-PAK

Absolute Maximum Ratings

Symbol

Description

Ratings

360

Unit

Collector to Emitter Voltage

Gate to Emitter Voltage

Pulsed Collector Current

CES

 30

GES

@ T = 25 C

220

C pulse(1)*

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

@ T = 25 C

125

@ T = 100 C

-55 to +150

stg

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

1.0

Unit

(IGBT)

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

C/W

JC

62.5

C/W

JA

Notes:

^{(1) Half Sine Wave, D < 0.01, pluse width < 1}sec

* Ic_pluse limited by max Tj

Publication Order Number:

FGD4536/D

October-2017, Rev. 3

123 4 5 6 7...9

中文翻译

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