Datasheet > FFSD0865A

FFSD0865A

更新时间： 2024-11-21 11:10:51

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
6页	385K
描述
SiC 二极管，650V，8A，DPAK

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FFSD0865A 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

8ꢀA, 650 V, D1, DPAK

1, 3. Cathode

2. Anode

Schottky Diode

FFSD0865A

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

DPAK

CASE 369AS

MARKING DIAGRAM

Features

• Max Junction Temperature 175°C

• Avalanche Rated 49 mJ

FFS

D0865A

AYWWZZ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery/No Forward Recovery

• This Device is Pb−Free, Halogen Free/BFR Free and RoHS

Compliant

FFSD0865A

YWW

= Specific Device Code

= Assembly Site

= Date Code (Year & Week)

= Lot Code

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Publication Order Number:

February, 2023 − Rev. 4

FFSD0865A/D

12 3 4 5 6

中文翻译

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