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FFSD0865B PDF预览

FFSD0865B

更新时间： 2024-11-21 11:13:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 429K
描述
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, DPAK

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FFSD0865B 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
Schottky Diode – EliteSiC,  
8 A, 650 V, D2, DPAK  
1, 3 Cathode  
2 Anode  
Schottky Diode  
FFSD0865B  
3
Silicon Carbide (SiC) Schottky Diodes use a completely new  
technology that provides superior switching performance and higher  
reliability compared to Silicon. No reverse recovery current,  
temperature independent switching characteristics, and excellent  
thermal performance sets Silicon Carbide as the next generation of  
power semiconductor. System benefits include highest efficiency,  
faster operating frequency, increased power density, reduced EMI, and  
reduced system size and cost.  
1
2
DPAK  
CASE 369AS  
Features  
MARKING DIAGRAM  
• Max Junction Temperature 175°C  
• Avalanche Rated 33 mJ  
• High Surge Current Capacity  
• Positive Temperature Coefficient  
• Ease of Paralleling  
FFS  
D0865B  
AYWWZZ  
• No Reverse Recovery/No Forward Recovery  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
FFSD0865B  
A
Y
WW  
ZZ  
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Assembly Lot Code  
Applications  
• General Purpose  
• SMPS, Solar Inverter, UPS  
• Power Switching Circuits  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Symbol  
Value  
650  
33  
Unit  
V
Peak Repetitive Reverse Voltage  
V
RRM  
Single Pulse Avalanche Energy (T = 25°C,  
L(pk)  
E
AS  
mJ  
J
I
= 11.5 A, L = 0.5 mH, V = 50 V)  
Continuous Rectified Forward  
Current  
T
T
< 153  
< 135  
I
8.0  
11.6  
577  
A
A
C
F
C
Non−Repetitive Peak Forward  
Surge Current  
T
= 25°C,  
= 10 ms  
I
FM  
C
P
t
T
= 150°C,  
= 10 ms  
538  
42  
C
P
t
Non−Repetitive Forward Surge  
Current (Half−Sine Pulse)  
T
= 25°C  
I
A
C
FSM  
t
P
= 8.3 ms  
Power Dissipation  
T
= 25°C  
P
tot  
91  
15  
W
C
T
C
= 150°C  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
February, 2023 − Rev. 3  
FFSD0865B/D  
123456

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