FFP08S60S

更新时间： 2024-11-01 03:12:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	135K
描述
Stealth 2 Rectifier

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中文翻译

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数据手册

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FFP08S60S 数据手册

April 2007

FFP08S60S

Stealth 2 Rectifier

Features

8A, 600V Stealth2 Rectifier

•

High Speed Switching ( Max. t_rr<30ns @ I_F=8A )

High Reverse Voltage and High Reliability

Avalanche Energy Rated

The FFP08S60S is stealth 2 rectifier with soft recovery charac-

teristics (t_rr<30ns). They has half the recovery time of hyperfast

rectifier and are silicon nitride passivated ion-implanted epitaxial

planar construction.

This device is intended for use as freewheeling of boost diode

in switching power supplies and other power swithching applica-

tions. Their low stored charge and hyperfast soft recovery mini-

mize ringing and electrical noise in many power switching

circuits reducing power loss in the switching transistors.

Applications

•

General Purpose

Switching Mode Power Supply

Boost Diode in continuous mode power factor corrections

Power switching circuits

Pin Assignments

TO-220-2L

2. Anode

1. Cathode

2. Anode

1. Cathode

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol

Parameter

Value

600

Units

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

I_F(AV)

I_FSM

Average Rectified Forward Current

@ T_C= 115 °C

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

_J,T_STG

Operating Junction and Storage Temperature

- 65 to +150

°C

Thermal Characteristics _T

= 25°C unless otherwise noted

Symbol

Parameter

Max

2.5

Units

R_θJC

Maximum Thermal Resistance, Junction to Case

°C/W

Package Marking and Ordering

Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

F08S60S

FFP08S60STU

TO-220-2L

FFP08S60S Rev. A

www.fairchildsemi.com

12 3 4 5

中文翻译

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