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FFM107-T PDF预览

FFM107-T

更新时间: 2024-11-13 19:49:27
品牌 Logo 应用领域
RECTRON 光电二极管
页数 文件大小 规格书
8页 175K
描述
Rectifier Diode,

FFM107-T 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMA, 2 PINReach Compliance Code:compliant
风险等级:5.62配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:1000 V最大反向恢复时间:0.5 µs
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

FFM107-T 数据手册

 浏览型号FFM107-T的Datasheet PDF文件第2页浏览型号FFM107-T的Datasheet PDF文件第3页浏览型号FFM107-T的Datasheet PDF文件第4页浏览型号FFM107-T的Datasheet PDF文件第5页浏览型号FFM107-T的Datasheet PDF文件第6页浏览型号FFM107-T的Datasheet PDF文件第7页 
FFM101  
THRU  
FFM107  
SURFACE MOUNT GLASS PASSIVATED  
FAST RECOVERY SILICON RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere  
FEATURES  
* Glass passivated device  
* Ideal for surface mounted applications  
* Low leakage current  
* Metallurgically bonded construction  
* Mounting position: Any  
* Weight: 0.057 gram  
* P/N suffix V means AEC-Q101 qualified, e.g:FFM101V  
* P/N suffix V means Halogen-free  
(
)
)
0.067 1.70  
(
)
)
0.110 2.79  
(
0.051 1.29  
(
0.086 2.18  
MECHANICAL DATA  
* Epoxy : Device has UL flammability classification 94V-0  
(
)
)
0.180 4.57  
(
0.160 4.06  
(
)
)
0.012 0.305  
(
0.006 0.152  
(
)
0.091 2.31  
(
)
)
0.067 1.70  
(
0.059 1.50  
(
)
)
0.008 0.203  
(
)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
0.035 0.89  
(
0.004 0.102  
(
)
)
0.209 5.31  
(
0.185 4.70  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
FFM101 FFM102 FFM103 FFM104 FFM105 FFM106 FFM107 UNITS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
RRM  
50  
35  
50  
100  
70  
100  
200  
140  
200  
400  
280  
400  
1.0  
600  
420  
600  
800  
560  
800  
1000  
700  
1000  
Volts  
Volts  
Volts  
Amps  
RMS  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current at T  
DC  
O
A
= 55oC  
I
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
30  
Amps  
A2S  
I2T  
3.74  
Typical Current Squared Time  
(Note 2) RQJL  
(Note 3) RQJA  
30  
70  
15  
0C/W  
0C/W  
pF  
Maximum Thermal Resistance  
Typical Junction Capacitance (Note 1)  
Operating and Storage Temperature Range  
CJ  
T
J
, TSTG  
-55 to + 150  
0 C  
ELECTRICAL CHARACTERISTICS (At T  
A
= 25oC unless otherwise noted)  
CHARACTERISTICS  
Maximum Forward Voltage at 1.0A DC  
Maximum Full Load Reverse Current,Full cycle Average at T  
SYMBOL  
FFM101 FFM102 FFM103 FFM104 FFM105 FFM106 FFM107 UNITS  
1.3  
50  
5.0  
Volts  
uAmps  
uAmps  
V
F
o
A
= 25 C  
@T  
@T  
A
= 25oC  
I
R
Maximum DC Reverse Current at  
Rated DC Blocking Voltage  
A
= 150oC  
2.0  
mAmps  
nSec  
trr  
150  
250  
500  
Maximum Reverse Recovery Time (Note 4)  
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC  
2018-01  
REV: C  
2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal.  
3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal.  
4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A  

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