Datasheet > FFM106-MH

FFM106-MH

更新时间： 2024-11-12 22:31:51

品牌	Logo	应用领域
美丽微 - FORMOSA		/
页数	文件大小	规格书
2页	83K
描述
Chip Silicon Rectifier - Fast recovery type

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中文翻译

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数据手册

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FFM106-MH 数据手册

Chip Silicon Rectifier

Formosa MS

FFM101-MH THRU FFM107-MH

Fast recovery type

Features

SOD-123H

Plastic package has Underwriters Laboratory

Flammability Classification 94V-O Utilizing Flame

RetardantEpoxy Molding Compound.

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

For surface mounted applications.

0.071(1.8)

0.055(1.4)

Exceeds environmental standards of MIL-S-19500 /

228

Low leakage current.

0.035(0.9)

0.028(0.7)

0.031(0.8) Typ.

Mechanical data

Case : Molded plastic, JEDECSOD-123H

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Dimensions in inches and (millimeters)

Polarity : Indicated by cathode band

Mounting Position : Any

Weight : 0.0393 gram

MAXIMUM RATINGS (AT T_A=25 C unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

I_O

MIN.

TYP.

MAX.

1.0

UNIT

Ambient temperature = 55 C

Forward rectified current

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

Forward surge current

I_FSM

V_R= V_RRMT_A= 25 C

5.0

100

Reverse current

I_R

V_R= V_RRMT_A= 100 C

Thermal resistance

Junction to ambient

Rq_JA

C_J

C / w

Diode junction capacitance

Storage temperature

f=1MHz and applied 4vDC reverse voltage

T_STG

-55

+150

Operating

MARKING

V_RRM

V_RMS

V_R

V_F

T_RR

temperature

SYMBOLS

CODE

( C)

(V)

(nS)

FFM101-MH

FFM102-MH

FFM103-MH

FFM104-MH

FFM105-MH

FFM106-MH

FFM107-MH

100

200

400

600

800

1000

100

200

400

600

800

150

140

280

420

560

700

*1 Repetitive peak reverse voltage

*2 RMS voltage

1.3

-55 to +150

250

500

*3 Continuous reverse voltage

*4 Maximum forward voltage

*5 Reverse recovery time

1000

中文翻译

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