Datasheet > FF1200R17KE3

FF1200R17KE3

更新时间： 2024-11-20 10:32:31

品牌	Logo	应用领域
EUPEC		双极性晶体管
页数	文件大小	规格书
8页	262K
描述
IGBT-modules

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中文翻译

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FF1200R17KE3 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FF1200R17KE3

IGBT-Wechselrichter / IGBT-inverter

Vorläufige Daten / preliminary data

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

1700

Kollektor-Dauergleichstrom

DC-collector current

T† = 80°C, TÝÎ = 150°C

T† = 25°C, TÝÎ = 150°C

I† ÒÓÑ

I†

1200

1600

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms

I†ç¢

PÚÓÚ

2400

5,95

Gesamt-Verlustleistung

total power dissipation

T† = 25°C, TÝÎ = 150°C

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

+/-20

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 1200 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C

2,00 2,45

2,40

V†Š ÙÈÚ

V•ŠÚÌ

Q•

Gate-Schwellenspannung

gate threshold voltage

I† = 48,0 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

5,2

5,8

14,0

1,6

6,4

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

110

3,50

Rückwirkungskapazität

reverse transfer capacitance

CØþÙ

I†Š»

Kollektor-Emitter Reststrom

collector-emitter cut-off current

5,0

Gate-Emitter Reststrom

gate-emitter leakage current

I•Š»

tÁ ÓÒ

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 1200 A, V†Š = 900 V

V•Š = ±15 V

R•ÓÒ = 1,2 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,74

0,80

µs

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 1200 A, V†Š = 900 V

V•Š = ±15 V

R•ÓÒ = 1,2 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,20

0,25

µs

tØ

tÁ ÓËË

tË

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 1200 A, V†Š = 900 V

V•Š = ±15 V

R•ÓËË = 1,5 Â

TÝÎ = 25°C

TÝÎ = 125°C

1,45

1,80

µs

Fallzeit (induktive Last)

fall time (inductive load)

I† = 1200 A, V†Š = 900 V

V•Š = ±15 V

R•ÓËË = 1,5 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,18

0,30

µs

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 1200 A, V†Š = 900 V

V•Š = ±15 V, L» = 50 nH

R•ÓÒ = 1,2 Â

TÝÎ = 25°C

TÝÎ = 125°C

240

350

EÓÒ

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 1200 A, V†Š = 900 V

V•Š = ±15 V, L» = 50 nH

R•ÓËË = 1,5 Â

TÝÎ = 25°C

TÝÎ = 125°C

305

445

EÓËË

Kurzschlußverhalten

SC data

t« ù 10 µs, V•Š ù 15 V

TÝÎ = 125°C, V†† = 1000 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

4800

17,0

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

21,0 K/kW

K/kW

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

pro IGBT / per IGBT

ð«ÈÙÚþ = 1 W/(m·K)

RÚÌ†™

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: Martin Wölz

date of publication: 2004-7-6

revision: 2.1

approved by: Christoph Lübke

12 3 4 5 6 7 8

中文翻译

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