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FF1200R17KE3NOSA1 PDF预览

FF1200R17KE3NOSA1

更新时间: 2024-01-27 03:20:58
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网晶体管
页数 文件大小 规格书
8页 391K
描述
Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel, MODULE-10

FF1200R17KE3NOSA1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Not Recommended零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X10针数:10
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.59外壳连接:ISOLATED
最大集电极电流 (IC):1600 A集电极-发射极最大电压:1700 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 代码:R-XUFM-X10
元件数量:2端子数量:10
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称断开时间 (toff):2100 ns标称接通时间 (ton):1050 ns
Base Number Matches:1

FF1200R17KE3NOSA1 数据手册

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TechnischeꢀInformationꢀ/ꢀTechnicalꢀInformation  
IGBT-Module  
IGBT-modules  
FF1200R17KE3  
VorläufigeꢀDaten  
PreliminaryꢀData  
IGBT,Wechselrichterꢀ/ꢀIGBT,Inverter  
HöchstzulässigeꢀWerteꢀ/ꢀMaximumꢀRatedꢀValues  
Kollektor-Emitter-Sperrspannung  
Collector-emitterꢀvoltage  
Tvj = 25°C  
VCES  
1700  
V
Kollektor-Dauergleichstrom  
ContinuousꢀDCꢀcollectorꢀcurrent  
TC = 80°C, Tvj max = 150°C  
TC = 25°C, Tvj max = 150°C  
IC nom  
IC  
1200  
1600  
A
A
PeriodischerꢀKollektor-Spitzenstrom  
Repetitiveꢀpeakꢀcollectorꢀcurrent  
tP = 1 ms  
ICRM  
Ptot  
2400  
5,95  
A
Gesamt-Verlustleistung  
Totalꢀpowerꢀdissipation  
TC = 25°C, Tvj max = 150  
kW  
Gate-Emitter-Spitzenspannung  
Gate-emitterꢀpeakꢀvoltage  
VGES  
+/-20  
V
CharakteristischeꢀWerteꢀ/ꢀCharacteristicꢀValues  
min. typ. max.  
Kollektor-Emitter-Sättigungsspannung  
Collector-emitterꢀsaturationꢀvoltage  
IC = 1200 A, VGE = 15 V  
IC = 1200 A, VGE = 15 V  
Tvj = 25°C  
Tvj = 125°C  
2,00 2,45  
2,40  
V
V
VCE sat  
VGEth  
QG  
Gate-Schwellenspannung  
Gateꢀthresholdꢀvoltage  
IC = 48,0 mA, VCE = VGE, Tvj = 25°C  
VGE = -15 V ... +15 V  
5,2  
5,8  
14,0  
1,6  
110  
3,50  
6,4  
V
µC  
Gateladung  
Gateꢀcharge  
InternerꢀGatewiderstand  
Internalꢀgateꢀresistor  
Tvj = 25°C  
RGint  
Cies  
Eingangskapazität  
Inputꢀcapacitance  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V  
VCE = 1700 V, VGE = 0 V, Tvj = 25°C  
VCE = 0 V, VGE = 20 V, Tvj = 25°C  
nF  
nF  
Rückwirkungskapazität  
Reverseꢀtransferꢀcapacitance  
Cres  
ICES  
IGES  
td on  
Kollektor-Emitter-Reststrom  
Collector-emitterꢀcut-offꢀcurrent  
5,0 mA  
Gate-Emitter-Reststrom  
Gate-emitterꢀleakageꢀcurrent  
400 nA  
µs  
Einschaltverzögerungszeit,ꢀinduktiveꢀLast  
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload  
IC = 1200 A, VCE = 900 V  
VGE = ±15 V  
RGon = 1,2 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,74  
0,80  
µs  
Anstiegszeit,ꢀinduktiveꢀLast  
Riseꢀtime,ꢀinductiveꢀload  
IC = 1200 A, VCE = 900 V  
VGE = ±15 V  
RGon = 1,2 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,20  
0,25  
µs  
µs  
tr  
td off  
tf  
Abschaltverzögerungszeit,ꢀinduktiveꢀLast  
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload  
IC = 1200 A, VCE = 900 V  
VGE = ±15 V  
RGoff = 1,5 Ω  
Tvj = 25°C  
Tvj = 125°C  
1,45  
1,80  
µs  
µs  
Fallzeit,ꢀinduktiveꢀLast  
Fallꢀtime,ꢀinductiveꢀload  
IC = 1200 A, VCE = 900 V  
VGE = ±15 V  
RGoff = 1,5 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,18  
0,30  
µs  
µs  
EinschaltverlustenergieꢀproꢀPuls  
Turn-onꢀenergyꢀlossꢀperꢀpulse  
IC = 1200 A, VCE = 900 V, LS = 50 nH  
VGE = ±15 V  
RGon = 1,2 Ω  
Tvj = 25°C  
Tvj = 125°C  
240  
350  
mJ  
mJ  
Eon  
Eoff  
AbschaltverlustenergieꢀproꢀPuls  
Turn-offꢀenergyꢀlossꢀperꢀpulse  
IC = 1200 A, VCE = 900 V, LS = 50 nH  
VGE = ±15 V  
RGoff = 1,5 Ω  
Tvj = 25°C  
Tvj = 125°C  
305  
445  
mJ  
mJ  
Kurzschlußverhalten  
SCꢀdata  
VGE 15 V, VCC = 1000 V  
VCEmax = VCES -LsCE ·di/dt  
ISC  
tP 10 µs, Tvj = 125°C  
4800  
A
Wärmewiderstand,ꢀChipꢀbisꢀGehäuse  
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase  
proꢀIGBTꢀ/ꢀperꢀIGBT  
RthJC  
RthCH  
Tvj op  
21,0 K/kW  
K/kW  
Wärmewiderstand,ꢀGehäuseꢀbisꢀKühlkörper proꢀIGBTꢀ/ꢀperꢀIGBT  
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink  
17,0  
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)  
TemperaturꢀimꢀSchaltbetrieb  
Temperatureꢀunderꢀswitchingꢀconditions  
-40  
125  
°C  
preparedꢀby:ꢀMW  
approvedꢀby:ꢀCL  
dateꢀofꢀpublication:ꢀ2013-10-02  
revision:ꢀ2.1  
1

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