是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X10 | 针数: | 12 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.71 | 最大集电极电流 (IC): | 4000 A |
集电极-发射极最大电压: | 1700 V | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X10 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 10 | 最高工作温度: | 175 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 6250 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 1910 ns | 标称接通时间 (ton): | 830 ns |
VCEsat-Max: | 2.45 V | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FF1000R17IE4DP_B2 | INFINEON | TIM |
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FF1000R17IE4DPB2BOSA1 | INFINEON | Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-12 |
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FF1000R17IE4F | INFINEON | Insulated Gate Bipolar Transistor, |
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FF1000R17IE4P | INFINEON | Insulated Gate Bipolar Transistor, |
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FF1000UD | FARADAY | GENERAL PURPOSE LP FILTER |
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FF100R06KF | ETC | TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 100A I(C) | M:HL080HD5.3 |
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