Technische Information / technical information
IGBT-Module
IGBT-modules
FF100R12KS4
62mm C-Serien Modul mit schnellem IGBT2 für hochfrequentes Schalten
62mm C-series module with the fast IGBT2 for high-frequency switching
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 80°C, TÝÎ = 150°C
T† = 25°C, TÝÎ = 150°C
I† ÒÓÑ
I†
100
150
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms
I†ç¢
PÚÓÚ
200
780
A
W
V
Gesamt-Verlustleistung
total power dissipation
T† = 25°C, TÝÎ = 150°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
+/-20
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 100 A, V•Š = 15 V
I† = 100 A, V•Š = 15 V
TÝÎ = 25°C
TÝÎ = 125°C
3,20 3,70
3,85
V
V
V†Š ÙÈÚ
V•ŠÚÌ
Q•
Gate-Schwellenspannung
gate threshold voltage
I† = 4,00 mA, V†Š = V•Š, TÝÎ = 25°C
V•Š = -15 V ... +15 V
4,5
5,5
1,10
2,5
6,5
V
µC
Â
Gateladung
gate charge
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
6,50
0,42
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
CØþÙ
I†Š»
Kollektor-Emitter Reststrom
collector-emitter cut-off current
5,0
Gate-Emitter Reststrom
gate-emitter leakage current
I•Š»
tÁ ÓÒ
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 100 A, V†Š = 600 V
V•Š = ±15 V
R•ÓÒ = 9,1 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,10
0,11
µs
µs
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 100 A, V†Š = 600 V
V•Š = ±15 V
R•ÓÒ = 9,1 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,06
0,07
µs
µs
tØ
tÁ ÓËË
tË
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 100 A, V†Š = 600 V
V•Š = ±15 V
R•ÓËË = 9,1 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,53
0,55
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I† = 100 A, V†Š = 600 V
V•Š = ±15 V
R•ÓËË = 9,1 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,03
0,04
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 100 A, V†Š = 600 V
V•Š = ±15 V, L» = 60 nH
R•ÓÒ = 9,1 Â
TÝÎ = 25°C
TÝÎ = 125°C
mJ
mJ
EÓÒ
9,50
7,70
650
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 100 A, V†Š = 600 V
V•Š = ±15 V, L» = 60 nH
R•ÓËË = 9,1 Â
TÝÎ = 25°C
TÝÎ = 125°C
mJ
mJ
EÓËË
Kurzschlussverhalten
SC data
V•Š ù 15 V, V†† = 900 V
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
t« ù 10 µs, TÝÎ = 125°C
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
RÚ̆™
0,16 K/W
K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K)
0,03
/
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Martin Knecht
date of publication: 2005-4-19
revision: 3.2
approved by: Wilhelm Rusche
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