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FEPE16JT-E3 PDF预览

FEPE16JT-E3

更新时间: 2024-11-22 01:17:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 91K
描述
Dual Common Cathode Ultrafast Plastic Rectifier

FEPE16JT-E3 数据手册

 浏览型号FEPE16JT-E3的Datasheet PDF文件第2页浏览型号FEPE16JT-E3的Datasheet PDF文件第3页浏览型号FEPE16JT-E3的Datasheet PDF文件第4页 
FEPE16xT  
Vishay General Semiconductor  
www.vishay.com  
Dual Common Cathode Ultrafast Plastic Rectifier  
FEATURES  
TO-220AB  
• Power pack  
• Glass passivated pellet chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
3
2
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
1
FEPE16xT  
PIN 1  
PIN 3  
PIN 2  
TYPICAL APPLICATIONS  
CASE  
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes, DC/DC  
converters, and other power switching application.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
2 x 8.0 A  
Case: TO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
VRRM  
IFSM  
50 V to 600 V  
200 A, 125 A  
trr  
35 ns, 50 ns  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
VF  
0.95 V, 1.30 V, 1.50 V  
150 °C  
TJ max.  
Package  
Diode variations  
TO-220AB  
Polarity: As marked  
Common cathode  
Mounting Torque: 10 in-lbs max.  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
FEPE FEPE FEPE FEPE FEPE FEPE FEPE FEPE  
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
V
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current at TC = 100 °C  
IF(AV)  
16  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
200  
125  
A
Operating storage and temperature range  
TJ, TSTG  
-55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)  
FEPE FEPE FEPE FEPE FEPE FEPE FEPE FEPE  
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT  
PARAMETER  
TEST CONDITIONS SYMBOL  
UNIT  
Maximum instantaneous forward  
voltage per diode  
(1)  
8.0 A  
VF  
0.95  
1.30  
1.50  
V
TC = 25 °C  
TC = 100 °C  
10  
Maximum DC reverse current per  
diode at rated DC blocking voltage  
IR  
μA  
500  
Maximum reverse recovery time  
per diode  
IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
trr  
35  
50  
ns  
Typical junction capacitance per  
diode  
4.0 V, 1 MHz  
CJ  
85  
60  
pF  
Note  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Revision: 23-Feb-16  
Document Number: 87919  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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