FEPE16xT
Vishay General Semiconductor
www.vishay.com
Dual Common Cathode Ultrafast Plastic Rectifier
FEATURES
TO-220AB
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
3
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
FEPE16xT
PIN 1
PIN 3
PIN 2
TYPICAL APPLICATIONS
CASE
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
2 x 8.0 A
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VRRM
IFSM
50 V to 600 V
200 A, 125 A
trr
35 ns, 50 ns
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
VF
0.95 V, 1.30 V, 1.50 V
150 °C
TJ max.
Package
Diode variations
TO-220AB
Polarity: As marked
Common cathode
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
FEPE FEPE FEPE FEPE FEPE FEPE FEPE FEPE
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
PARAMETER
SYMBOL
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
A
Maximum DC blocking voltage
100
Maximum average forward rectified current at TC = 100 °C
IF(AV)
16
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
200
125
A
Operating storage and temperature range
TJ, TSTG
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
FEPE FEPE FEPE FEPE FEPE FEPE FEPE FEPE
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
PARAMETER
TEST CONDITIONS SYMBOL
UNIT
Maximum instantaneous forward
voltage per diode
(1)
8.0 A
VF
0.95
1.30
1.50
V
TC = 25 °C
TC = 100 °C
10
Maximum DC reverse current per
diode at rated DC blocking voltage
IR
μA
500
Maximum reverse recovery time
per diode
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
35
50
ns
Typical junction capacitance per
diode
4.0 V, 1 MHz
CJ
85
60
pF
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 23-Feb-16
Document Number: 87919
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000