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FEP-E330GP-E3 PDF预览

FEP-E330GP-E3

更新时间: 2024-11-21 19:26:19
品牌 Logo 应用领域
威世 - VISHAY 局域网功效瞄准线二极管
页数 文件大小 规格书
4页 79K
描述
DIODE 30 A, 400 V, SILICON, RECTIFIER DIODE, TO-247AD, PLASTIC, TO-3P, 3 PIN, Rectifier Diode

FEP-E330GP-E3 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-247AD包装说明:R-PSFM-T3
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.37其他特性:LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:300 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.05 µs
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

FEP-E330GP-E3 数据手册

 浏览型号FEP-E330GP-E3的Datasheet PDF文件第2页浏览型号FEP-E330GP-E3的Datasheet PDF文件第3页浏览型号FEP-E330GP-E3的Datasheet PDF文件第4页 
FEP30AP thru FEP30JP  
Vishay General Semiconductor  
Dual Common Cathode Ultrafast Rectifier  
FEATURES  
• Glass passivated chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• Low thermal resistance  
• High forward surge capability  
• Solder dip 260 °C, 40 s  
3
2
1
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TO-247AD (TO-3P)  
PIN 2  
CASE  
PIN 1  
PIN 3  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes,  
dc-to-dc converters, and other power switching  
application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
30 A  
MECHANICAL DATA  
Case: TO-247AD (TO-3P)  
Epoxy meets UL 94V-0 flammability rating  
VRRM  
IFSM  
trr  
50 V to 600 V  
300 A  
35 ns, 50 ns  
0.95 V, 1.3 V, 1.5 V  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
VF  
TJ max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
FEP  
30AP  
FEP  
30BP  
FEP  
30CP  
FEP  
30DP  
FEP  
30FP  
FEP  
30GP  
FEP  
30HP  
FEP  
30JP  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
at TC = 100 °C  
IF(AV)  
30  
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
300  
A
Operating storage and temperature range  
TJ, TSTG  
- 55 to + 150  
°C/W  
Document Number: 88597  
Revision: 29-Aug-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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