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FEP16GTD PDF预览

FEP16GTD

更新时间: 2024-11-01 12:46:19
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页数 文件大小 规格书
2页 344K
描述
16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers

FEP16GTD 数据手册

 浏览型号FEP16GTD的Datasheet PDF文件第2页 
FEP16A thru FEP16J  
®
FEP16A thru FEP16J  
Pb Free Plating Product  
16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers  
Unit : inch (mm)  
TO-220AB  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
Glass passivated chip junction  
.139(3.55)  
MIN  
Fast switching for high efficiency  
.054(1.39)  
.045(1.15)  
and High current capability  
Low forward voltage drop  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Environment|DC Motor Control  
Plating Power Supply|UPS|Inverter  
Car Amplifier and Sound Device System etc..  
.038(0.96)  
.025(0.65)MAX  
.019(0.50)  
Mechanical Data  
Case: Molded plastic TO-220AB Heatsink  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
.1(2.54)  
.1(2.54)  
Case  
Case  
Case  
Polarity:As marked on body  
Mounting position: Any  
Weight: 2.03 grams  
Doubler  
Series Connection  
Suffix "TD"  
Negative CT  
Common Anode  
Suffix "TA"  
Positive CT  
Common Cathode  
Suffix "T"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
FEP16AT FEP16BT FEP16DT FEP16FT FEP16GT FEP16JT  
FEP16ATA FEP16BTA FEP16DTA FEP16FTA FEP16GTA FEP16JTA  
FEP16ATD FEP16BTD FEP16DTD FEP16FTD FEP16GTD FEP16JTD  
Common Cathode Suffix "T"  
UNIT  
SYMBOL  
Common Anode Suffix "TA"  
Anode and Cathode Coexistence Suffix "TD"  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
V
DC  
100  
Maximum Average Forward Rectified  
16.0  
A
A
V
IF(AV)  
Current T  
C
=100oC  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
175  
150  
Maximum Instantaneous Forward Voltage  
@ 8.0 A  
V
F
0.98  
1.3  
1.7  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
J
=25oC  
uA  
uA  
nS  
10.0  
250  
I
R
J
=125oC  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
90  
pF  
oCW  
C
J
R
JC  
2.2  
Operating Junction and Storage  
Temperature Range  
oC  
-55 to + 150  
T , TSTG  
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com/  
© 2006 Thinki Semiconductor Co.,Ltd.  

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