Datasheet > FEP16GTD

FEP16GTD

更新时间： 2024-11-20 12:46:19

品牌	Logo	应用领域
THINKISEMI		二极管局域网
页数	文件大小	规格书
2页	344K
描述
16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FEP16GTD 数据手册

FEP16A thru FEP16J

Pb Free Plating Product

16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers

Unit : inch (mm)

TO-220AB

Features

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

ꢀ Glass passivated chip junction

.139(3.55)

MIN

Fast switching for high efficiency

ꢀ

.054(1.39)

.045(1.15)

and High current capability

Low forward voltage drop

ꢀ

ꢀ Low reverse leakage current

High surge current capability

ꢀ

Application

Automotive Environment|DC Motor Control

ꢀ

Plating Power Supply|UPS|Inverter

Car Amplifier and Sound Device System etc..

.038(0.96)

.025(0.65)MAX

.019(0.50)

Mechanical Data

ꢀ

Case: Molded plastic TO-220AB Heatsink

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

.1(2.54)

Case

ꢀ

Polarity:As marked on body

Mounting position: Any

Weight: 2.03 grams

Doubler

Series Connection

Suffix "TD"

Negative CT

Common Anode

Suffix "TA"

Positive CT

Common Cathode

Suffix "T"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

FEP16AT FEP16BT FEP16DT FEP16FT FEP16GT FEP16JT

FEP16ATA FEP16BTA FEP16DTA FEP16FTA FEP16GTA FEP16JTA

FEP16ATD FEP16BTD FEP16DTD FEP16FTD FEP16GTD FEP16JTD

Common Cathode Suffix "T"

UNIT

SYMBOL

Common Anode Suffix "TA"

Anode and Cathode Coexistence Suffix "TD"

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

RRM

RMS

100

200

140

200

300

210

300

400

280

400

600

420

600

Maximum DC Blocking Voltage

100

Maximum Average Forward Rectified

16.0

IF(AV)

Current T

=100^oC

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

FSM

175

150

Maximum Instantaneous Forward Voltage

@ 8.0 A

0.98

1.3

1.7

Maximum DC Reverse Current @T

At Rated DC Blocking Voltage @T

=25^oC

10.0

250

=125^oC

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Trr

^oCW

2.2

Operating Junction and Storage

Temperature Range

^oC

-55 to + 150

T , TSTG

NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

Page 1/2

http://www.thinkisemi.com/

中文翻译

下载PDF

与FEP16GTD相关器件

型号	品牌	获取价格	描述	数据表
FEP16GT-E3	VISHAY	获取价格	Dual Common-Cathode Ultrafast Plastic Rectifier
FEP16GT-E3/45	VISHAY	获取价格	DIODE ARRAY GP 400V 16A TO220AB
FEP16GT-G	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, 400V V(RRM), Silicon, TO-220AB, LEAD FREE, PLAST
FEP16GTHE3/45	VISHAY	获取价格	DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
FEP16GTS	RENESAS	获取价格	16.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers
FEP16HP	EIC	获取价格	Dual Ultrafast Plastic Rectifiers
FEP16HT	EIC	获取价格	Ultrafast Plastic Rectifiers
FEP16HT	TAITRON	获取价格	16A Super Fast Recovery Rectifiers
FEP16HT	VISHAY	获取价格	FAST EFFICIENT PLASTIC RECTIFIER
FEP16HT	FAIRCHILD	获取价格	16 Ampere Glass Passivated Super Fast Rectifiers

与FEP16GTD相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

FEP16GTD

FEP16GTD 数据手册

与FEP16GTD相关器件

与FEP16GTD相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FEP16GTD

FEP16GTD 数据手册

与FEP16GTD相关器件

与FEP16GTD相关文章

您还可以找

您在本页遇到什么问题？