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FEP16GT-E3/45 PDF预览

FEP16GT-E3/45

更新时间： 2024-11-20 22:30:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 145K
描述
DIODE ARRAY GP 400V 16A TO220AB

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中文翻译

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FEP16GT-E3/45 数据手册

 浏览型号FEP16GT-E3/45的Datasheet PDF文件第2页浏览型号FEP16GT-E3/45的Datasheet PDF文件第3页浏览型号FEP16GT-E3/45的Datasheet PDF文件第4页浏览型号FEP16GT-E3/45的Datasheet PDF文件第5页 
FEP16xT, FEPF16xT, FEPB16xT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Ultrafast Plastic Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Power pack  
• Glass passivated pallet chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• High forward surge capability  
3
3
2
• AEC-Q101 qualified  
2
1
1
FEP16xT  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C (for TO-263AB package)  
FEPF16xT  
PIN 1  
PIN 2  
CASE  
PIN 1  
PIN 2  
PIN 3  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
(for TO-220AB and ITO-220AB package)  
PIN 3  
TO-263AB  
K
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
TYPICAL APPLICATIONS  
1
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes, DC/DC  
converters, and other power switching application.  
FEPB16xT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
IF(AV)  
2 x 8.0 A  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
VRRM  
IFSM  
trr  
50 V to 600 V  
200 A, 125 A  
35 ns, 50 ns  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
VF  
0.95 V, 1.30 V, 1.50 V  
150 °C  
TJ max.  
Polarity: As marked  
TO-220AB, ITO-220AB,  
TO-263AB  
Package  
Mounting Torque: 10 in-lbs max.  
Diode variations  
Common cathode  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL FEP16AT FEP16BT FEP16CT FEP16DT FEP16FT FEP16GT FEP16HT FEP16JT UNIT  
Maximum repetitive peak reverse  
voltage  
VRRM  
50  
100  
150  
200  
300  
400  
500  
600  
V
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
105  
150  
140  
200  
210  
300  
280  
400  
350  
500  
420  
600  
V
V
Maximum DC blocking voltage  
100  
Maximum average forward  
rectified current at TC = 100 °C  
IF(AV)  
16  
A
Peak forward surge current 8.3 ms  
single half sine-wave superimposed  
on rated load per diode  
IFSM  
200  
125  
A
Operating storage and temperature  
range  
TJ, TSTG  
VAC  
-55 to +150  
1500  
°C  
V
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
Revision: 20-Feb-15  
Document Number: 88596  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

中文翻译

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FEP16GT-E3/45 替代型号

型号 品牌 替代类型 描述 数据表
FEP16GTHE3/45 VISHAY

完全替代

 DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
FEP16GT/45 VISHAY

类似代替

 Rectifier Diode, 16A, 400V V(RRM)

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