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FDSS2407 PDF预览

FDSS2407

更新时间: 2024-11-08 11:13:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
14页 777K
描述
N 沟道逻辑电平门极双 MOSFET 60V,3.3A,132mΩ

FDSS2407 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:0.94
Is Samacsys:N雪崩能效等级(Eas):140 mJ
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压:62 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3.3 A
最大漏源导通电阻:0.11 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.27 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDSS2407 数据手册

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