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FD1500CV-90DA PDF预览

FD1500CV-90DA

更新时间: 2024-11-21 03:36:19
品牌 Logo 应用领域
三菱 - MITSUBISHI 整流二极管高功率软恢复电源高功率电源软恢复二极管
页数 文件大小 规格书
2页 32K
描述
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE

FD1500CV-90DA 技术参数

生命周期:Obsolete包装说明:O-CEDB-N2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.84Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:HIGH POWER SOFT RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):5 VJESD-30 代码:O-CEDB-N2
最大非重复峰值正向电流:1900 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:1200 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大重复峰值反向电压:4500 V
子类别:Rectifier Diodes表面贴装:YES
端子形式:NO LEAD端子位置:END
Base Number Matches:1

FD1500CV-90DA 数据手册

 浏览型号FD1500CV-90DA的Datasheet PDF文件第2页 
MITSUBISHI SOFT RECOVERY DIODE  
FD1500CV-90DA  
HIGH POWER, HIGH FREQUENCY  
PRESS PACK TYPE  
OUTLINE DRAWING  
Dimensions in mm  
FD1500CV-90DA  
6.35 × 10.8  
φ3.5 ± 0.2  
2.2 ± 0.2DEPTH  
φ85 ± 0.2  
TYPE NAME  
12 ± 2  
φ85 ± 0.2  
φ120MAX  
φ3.5 ± 0.2  
2.2 ± 0.2DEPTH  
¡VRRM Repetitive peak reverse voltage ................... 4500V  
¡IT(AV) Average on-state current .................... 1200A  
APPLICATION  
High-power inverters  
Fly-hweel diode for GCT Thyristor  
Power supplies as high frequency rectifiers  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Conditions  
Unit  
VRRM  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
4500  
4500  
3600  
3000  
V
V
V
V
VRSM  
VR(DC)  
V(LTDS)  
Long term DC stability voltage  
Symbol  
IF(RMS)  
IF(AV)  
IFSM  
Parameter  
RMS forward current  
Average forward current  
Surge forward current  
Current-squared, time integration  
Critical rate of rise of reverse  
recovery current  
Conditions  
Ratings  
Unit  
A
Applied for all condition angles  
1900  
1200  
f = 60Hz, sinewave θ = 180°, Tf =74°C  
A
26  
2.8× 106  
kA  
A2s  
One half cycle at 60Hz, Tj =125°C start  
I2t  
IFM =1500A, VR = 2250V, Tj = 25/125°C  
CC =6µF, LC = 0.3µH  
1000  
A/µs  
di/dt  
(See Fig. 1, 2)  
Operation junction temperature  
Storage temperature  
Mounting force required  
Weight  
Tj  
–40 ~ 125  
–40 ~ 150  
39 ~ 55  
°C  
Tstg  
°C  
kN  
g
(Recommended value 47kN)  
Typical value 1450g  
ELECTRICAL CHARACTERISTICS  
Limits  
Typ.  
Symbol  
Parameter  
Forward voltage  
Test conditions  
Unit  
Min.  
Max.  
5
VFM  
IFM = 3400A, Tj = 125°C  
V
IRRM  
QRR  
Repetitive peak reverse current VRM = 4500V, Tj = 125°C  
150  
4000  
7
mA  
µC  
Reverse recovery charge  
Reverse recovery energy  
Thermal resistance  
IFM = 1500A, di/dt = 1000A/µs, VR = 2250V, Tj = 125°C  
Erec  
Rth(j-f)  
CC = 6µF, LC = 0.3µH  
(See Fig. 1, 2)  
J/P  
K/W  
Junction to Fin  
0.0071  
Jul. 2002  

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