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FD1500W

更新时间： 2024-11-21 10:31:59

品牌	Logo	应用领域
其他 - ETC		光电二极管光电二极管
页数	文件大小	规格书
2页	62K
描述
Large Area InGaAs PIN Photodiodes diameter of active area=1.5 mm

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PART NUMBER

FD1500W

Opto-Technology

Fermionics

Large Area InGaAs PIN Photodiodes

diameter of active area=1.5 mm

DESCRIPTION

Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral

response in the region 800 nm to 1700 nm. The photosensitive area is 1.5 mm in diameter. Planar-passivated device

structure.

ABSOLUTE MAXIMUM RATINGS (T=25°C)

PARAMETER

Storage Temperature

Operating Temperature

Forward Current

RATING

-40 to +100

-40 to +85

100

UNITS

°C

Reverse Current

Reverse Voltage

OPTICAL AND ELECTRICAL CHARACTERISTICS (T=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

0.10

0.80

0.85

TYP

0.20

0.90

0.95

MAX

UNITS

A/W

= 850 nm

= 1300 nm

= 1550 nm

Responsivity

ꢀ

Shunt Resistance

Capacitance

R_S

V =0V

Ω

V =0V

300

450

ꢀVery High Shunt Resistance devices are available upon request.

DIMENSIONAL OUTLINE

ANODE

CATHODE

CASE

(dimensions in inches)

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