Datasheet > FD090U04A5P

FD090U04A5P

更新时间： 2024-01-29 23:31:40

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英飞凌 - INFINEON		/
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Diode

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FD090U04A5P 技术参数

生命周期：	Active	零件包装代码：	WAFER
包装说明：	5 INCH, WAFER	针数：	1
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.40	风险等级：	5.72
应用：	GENERAL PURPOSE	外壳连接：	CATHODE
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	1.3 V
JESD-30 代码：	S-XUUC-N1	元件数量：	1
相数：	1	端子数量：	1
封装主体材料：	UNSPECIFIED	封装形状：	SQUARE
封装形式：	UNCASED CHIP	认证状态：	Not Qualified
最大重复峰值反向电压：	400 V	最大反向恢复时间：	0.043 µs
子类别：	Rectifier Diodes	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	UPPER
Base Number Matches：	1

FD090U04A5P 数据手册

I - 0523J rev.A

FD090U04A5B

FRED Die in Wafer Form

400V

V_F= 1.3V

(max.)

^z100% Tested at Probe c

z Available in Tape and Reel (upon request),

Chip Pack, and Sawn on Film d

5" Wafer

Electrical Characteristics

Parameter

Description

Min

–––

400V

–––

Typ

–––

Max

1.3V

–––

10µA

–––

Test Conditions

T_J= 25°C, I_F= 8A

T_J= 25°C, I_RRM= 100µA

T_J= 25°C, V_RRM= 400V

V_FM

V_RRM

I_RM

Maximum Forward Voltage

Minimum Reverse Breakdown Voltage

Max. Reverse Leakage Current

Typ. Reverse Recovery Time

–––

43 ns

t_rr

I_F= 8A, di/dt = 200A/µs, V_R= 200V

Mechanical Data

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-Ni-Ag ( 1kA-2kA-3kA)

99%Al, 1%Si (3 µm)

0.090" x 0.090" (see drawing)

125 mm

14 mils

56 ±10 µm

0.25 mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

8ETU04 Series

Wafer Diameter:

Wafer Thickness:

Scribe Line Width

Reject Ink Dot Size

Recommended Storage Environment:

Recommended Die Attach Conditions:

Reference Package

Die Outline

NOTES:

40 (1.57)

Wafer flat alligned with

side b of the die

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).

2. CONTROLLING DIMENSION (INCH):

0.35 ± 0.01

(14 ± 0.4)

3. DIMENSIONS AND TOLERANCES:

a = 2.28 +0, - 0.01

(90 +0, - 0.4)

b = 2.28 +0, - 0.01

(90 +0, - 0.4)

c = 1.85 +0, - 0.01

(72.8 +0, - 0.4)

d = 1.85 +0, - 0.01

(72.8 +0, - 0.4)

4. LETTER DESIGNATION:

A = Anode (Top Metal)

C = Cathode (Back Metal)

5. SAWING:

Recommended Blade

SEMITEC S1025 QS00 Blade

125 (4.92)

Note:

c The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is

provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged

and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured

using IR’s established processes. Programs for customer-specified testing are available upon request. IR has

experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.

Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a

number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard

package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms

and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which

are available upon request.

d Part number shown is for die in waveform. Contact factory for these other options.

www.irf.com

09/01/06

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与FD090U04A5P相关器件

型号	品牌	描述	获取价格	数据表
FD090U04A5R	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, 5 INCH, WAFER	获取价格
FD100	FAIRCHILD	Rectifier Diode, 1 Element, 0.075A, 50V V(RRM), Silicon, DO-7, GLASS PACKAGE-2	获取价格
FD1000A	FINECHIPS	3-COM 52-SEG, 4-COM 51-SEG LCD Display Driver	获取价格
FD1000A16	POWEREX	Rectifier Diode, 1 Element, 800A, 800V V(RRM),	获取价格
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