I - 0519J revꢀ
FD087H02A5B
FRED Die in Wafer Form
200V
VF = 0.975V
(max.)
z 100% Tested at Probe c
z Available in Tape and Reel (upon request),
Chip Pack, and Sawn on Film d
5" Wafer
Electrical Characteristics
Parameter
Description
Min
–––
200V
–––
–––
Typ
–––
–––
–––
20ns
Max
Test Conditions
VFM
VRRM
IRM
Maximum Forward Voltage
0.975 V TJ = 25°C, IF = 8A
Minimum Reverse Breakdown Voltage
Max. Reverse Leakage Current
Typ. Reverse Recovery Time
–––
5µA
–––
TJ = 25°C, IRRM = 100µA
TJ = 25°C, VRRM = 200V
IF = 8 A, di/dt = 200A/µs, VR = 160V
trr
Mechanical Data
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Cr-Ni-Ag ( 1kA-2kA-3kA)
99%Al, 1%Si (3ꢁꢂ)
0.087" x 0.087" (see drawing)
125 mm
14 mꢃꢄꢅ
66 ±10 µm
0.25 mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 °C
MUR820 Series
Wafer Diameter:
Wafer Thickness:
Scribe Line Width
Reject Ink Dot Size
Recommended Storage Environment:
Recommended Die Attach Conditions:
Reference Packaged Part
Die Outline
NOTES:
40 (1.57)
Wafer flat alligned with
side b of the die
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).
2. CONTROLLING DIMENSION (INCH):
a
c
0.35 ± 0.01
(14 ± 0.4)
3. DIMENSIONS AND TOLERANCES:
a = 2.21 +0, - 0.01
(87 +0, - 0.4)
b = 2.21 +0, - 0.01
(87 +0, - 0.4)
C
c = 1.78 +0, - 0.01
(70.1 +0, - 0.4)
A
d = 1.78 +0, - 0.01
(70.1 +0, - 0.4)
4. LETTER DESIGNATION:
A = Anode (Top Metal)
C = Cathode (Back Metal)
5. SAWING:
Ø
125 (4.92)
Recommended Blade
SEMITEC S1025 QS00 Blade
Note:
c The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is
provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged
and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured
using IR’s established processes. Programs for customer-specified testing are available upon request. IR has
experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.
Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a
number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard
package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms
and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which
are available upon request.
d Part number shown is for die in waveform. Contact factory for these other options.
09/01/06
Document Number: 93763
www.vishay.com
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