Datasheet > FD080H02A5F

FD080H02A5F

更新时间： 2024-02-11 03:51:19

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管
页数	文件大小	规格书
2页	80K
描述
Rectifier Diode, 1 Element, 600V V(RRM)

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

FD080H02A5F 技术参数

生命周期：	Obsolete	零件包装代码：	DIE
包装说明：	S-XUUC-N1	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.40	风险等级：	5.75
应用：	GENERAL PURPOSE	外壳连接：	CATHODE
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	0.8 V
JESD-30 代码：	S-XUUC-N1	元件数量：	1
相数：	1	端子数量：	1
封装主体材料：	UNSPECIFIED	封装形状：	SQUARE
封装形式：	UNCASED CHIP	认证状态：	Not Qualified
最大重复峰值反向电压：	600 V	最大反向恢复时间：	0.026 µs
子类别：	Rectifier Diodes	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	UPPER
Base Number Matches：	1

FD080H02A5F 数据手册

Bulletin I0533J rev. A 04/06

FD080H02A5F

FRED Die in Wafer Form

200V

V_F= 0.9V

(max.)

^z100% Tested at Probe c

z Available in Tape and Reel (upon request)

z Chip Pack, and Sawn on Film d

5" Wafer

Electrical Characteristics (@ T = 25°C)

Parameter

Description

Typical Forward Voltage

Min

–––

Typ

0.83

0.74

–––

Max

0.9V

0.8

Test Conditions

V_FM

V_RRM

I_RM

t_rr

T_J= 25°C, I_F= 3A

T_J= 25°C, I_F= 1A

–––

3 μA

–––

T_J= 25°C, I_F= 1A

Minimum Reverse Breakdown Voltage 600v

T_J= 25°C, I_RRM= 100μA

T_J= 25°C, V_RRM= 200V

I_F= 1A, di/dt = 100A/μs, V_R= 30v

Max. Reverse Leakage Current

Typ. Reverse Recovery Time

–––

26ns

21ns

t_rr

I_F= 3A, di/dt = 200A/μs, V_R= 160v 3)

Mechanical Data

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-Ni-Ag ( 1kA-2kA-3kA)

99%Al, 1%Si (3microns)

0.080" x 0.080" (see drawing)

125 mm

Wafer Diameter:

Wafer Thickness:

14 mils

Scribe Line Width

66 ±10 μm

Reject Ink Dot Size

0.25 mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

Recommended Storage Environment:

Recommended Die Attach Conditions:

Reference Packaged Part

I_RM, t_rrand R_thJC/ R_thJAdata refer to packed die in TO220

Die Outline

NOTES:

40 (1.57)

Wafer flat alligned with

side b of the die

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).

2. CONTROLLING DIMENSION (INCH):

0.35 ± 0.01

(14 ± 0.4)

3. DIMENSIONS AND TOLERANCES:

a = 2.032 +0, - 0.01

(80 +0, - 0.4)

b = 2.032 +0, - 0.01

(80 +0, - 0.4)

c = 1.604 +0, - 0.01

(63.14 +0, - 0.4)

d = 1.604 +0, - 0.01

(63.14 +0, - 0.4)

4. LETTER DESIGNATION:

A = Anode (Top Metal)

C = Cathode (Back Metal)

5. SAWING:

Recommended Blade

SEMITEC S1025 QS00 Blade

125 (4.92)

Note:

1) The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is

provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged

and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured

using IR’s established processes. Programs for customer-specified testing are available upon request. IR has

experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.

Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a

number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard

package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms

and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which

are available upon request.

2) Part number shown is for die in waveform. Contact factory for these other options.

3) V and t limits refer to packaed devices in TO-220 unless otherwise stated.

4) V and t limits refer to wafer level

下载PDF

与FD080H02A5F相关器件

型号	品牌	描述	获取价格	数据表
FD080H02A5R	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-2	获取价格
FD0810004	PERICOM	Oscillator, 1MHz Min, 133MHz Max, 8.192MHz Nom,	获取价格
FD0810005	PERICOM	Oscillator, 1.8432MHz Min, 125MHz Max, 8.192MHz Nom, CMOS,	获取价格
FD087H02A5B	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 200V V(RRM), Silicon, WAFER	获取价格
FD087H02A5F	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 200V V(RRM), Silicon, WAFER	获取价格
FD087H02A5P	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 200V V(RRM), Silicon, WAFER	获取价格

与FD080H02A5F相关文章

STM32H743技术深度剖析与应用案例探索
2024-05-30

14
LM321中文资料解析：引脚功能介绍、技术特点、技术特性分析
2024-05-30

15
74HC14芯片资料介绍：性能特性分析、引脚介绍
2024-05-30

12
LM1875芯片手册：功放参数分析、引脚说明、电路设计要点
2024-05-30

9

产品中心

服务支持

精选活动

关于我们

帮助中心

FD080H02A5F

FD080H02A5F 技术参数

FD080H02A5F 数据手册

与FD080H02A5F相关器件

与FD080H02A5F相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FD080H02A5F

FD080H02A5F 技术参数

FD080H02A5F 数据手册

与FD080H02A5F相关器件

与FD080H02A5F相关文章

您还可以找

您在本页遇到什么问题？