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FCU10B60 PDF预览

FCU10B60

更新时间: 2024-11-27 23:13:15
品牌 Logo 应用领域
NIEC 整流二极管
页数 文件大小 规格书
5页 55K
描述
FRD - For Power Factor Improvement High Frequency Recification

FCU10B60 数据手册

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FRD Type : FCU10B60  
For Power Factor Improvement High Frequency Rectification  
FEATURES  
OUTLINE DRAWING  
* Fully Molded Isolation  
* Dual Diodes – Cathode Common  
* Ultra – Fast Recovery  
* Low Forward Voltage Drop  
* High Surge Capability  
Maximum Ratings  
Approx Net Weight:1.75g  
FCU10B60  
Symbol  
Rating  
Unit  
V
Repetitive Peak Reverse Voltage  
Average Rectified Output Current  
RMS Forward Current  
VRRM  
IO  
IF(RMS)  
IFSM  
600  
50 Hz,Full Sine Wave  
Resistive Load  
11.1  
10  
60  
Tc=77°C  
A
A
A
50 Hz Full Sine Wave,1cycle  
Non-repetitive  
Surge Forward Current  
Operating JunctionTemperature Range  
Storage Temperature Range  
Mounting torque  
Tjw  
Tstg  
- 40 to + 150  
- 40 to + 150  
0.5 Recommended value  
°C  
°C  
Nm  
Electrical Thermal Characteristics  
Symbol  
Conditions  
Min. Typ. Max. Unit  
Characteristics  
Peak Reverse Current  
Peak Forward Voltage  
IRM  
VFM  
Tj=25°C,VRM=VRRM per Arm  
Tj=25°C, IFM=5A per Arm  
IFM= 5 A,  
-
-
-
30  
2.7  
µA  
V
2.3  
Reverse Recovery Time  
trr  
-
19  
30  
ns  
-di/dt= 50 A/µs, Ta= 25°C  
Rth(j-c) Junction to Case  
Rth(c-f) Case to Fin  
-
-
-
-
3
1.5  
Thermal Resistance  
°C/W  

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