Datasheet > FCU10A30

FCU10A30

更新时间： 2024-11-25 23:13:15

品牌	Logo	应用领域
NIEC		/
页数	文件大小	规格书
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描述
FRD - Low Forward Voltage Drop

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中文翻译

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数据手册

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FCU10A30 数据手册

10A 300V 30ns

FRD Type : FCU10A30

OUTLINE DRAWING

For Power Factor Improvement High Frequency Rectification

FEATURES

* Fully Molded Isolation

* Dual Diodes – Cathode Common

* Ultra – Fast Recovery

* Low Forward Voltage Drop

* High Surge Capability

Maximum Ratings

Approx Net Weight:1.75g

FCU10A30

Symbol

Rating

Unit

Repetitive Peak Reverse Voltage

Average Rectified Output Current

RMS Forward Current

V_RRM

I_O

I_F(RMS)

I_FSM

300

50 Hz,Full Sine Wave

Resistive Load

11.1

Tc=109°C

50 Hz Full Sine Wave,1cycle

Non-repetitive

Surge Forward Current

100

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

Tjw

Tstg

- 40 to + 150

0.5 Recommended value

°C

N•m

Electrical • Thermal Characteristics

Symbol

Conditions

Min. Typ. Max. Unit

Characteristics

Peak Reverse Current

Peak Forward Voltage

I_RM

V_FM

Tj=25°C,V_RM=V_RRMper Arm

Tj=25°C, I_FM=5A per Arm

I_FM= 5 A,

µA

1.12 1.30

Reverse Recovery Time

trr

-di/dt= 50 A/µs, Ta= 25°C

Rth(j-c) Junction to Case

Rth(c-f) Case to Fin

1.5

Thermal Resistance

°C/W

12 3 4 5

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与FCU10A30相关器件

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FCU10A40	NIEC	获取价格	Rectifier Diode, 1 Phase, 2 Element, 10A, 400V V(RRM), Silicon,
FCU10A40	KYOCERA AVX	获取价格	Fast recovery diodes are PN junction diodes with the same structure and function as genera
FCU10A60	NIEC	获取价格	FRD FOR POWER FACTOR IMPROVEMENT HIGH FREQUENCY RECTIFICATION
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FCU10UC16	NIEC	获取价格	Rectifier Diode, 1 Phase, 2 Element, 10A, 160V V(RRM), Silicon,
FCU10UC30	NIEC	获取价格	Rectifier Diode, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon,
FCU10UC40	NIEC	获取价格	Rectifier Diode, 1 Phase, 2 Element, 10A, 400V V(RRM), Silicon,
FCU20A20	KYOCERA AVX	获取价格	Fast recovery diodes are PN junction diodes with the same structure and function as genera