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FCP20N60 PDF预览

FCP20N60

更新时间： 2024-11-24 11:14:31
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 646K
描述
功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，20 A，190 mΩ，TO-220

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中文翻译

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FCP20N60 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Not Recommended包装说明：TO-220, 3 PIN
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.29.00.95Factory Lead Time：12 weeks
风险等级：7.75Is Samacsys：N
雪崩能效等级（Eas）：690 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：600 V最大漏极电流 (ID)：20 A
最大漏源导通电阻：0.19 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：60 A认证状态：Not Qualified
表面贴装：NO端子面层：Matte Tin (Sn) - annealed
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FCP20N60 数据手册

 浏览型号FCP20N60的Datasheet PDF文件第2页浏览型号FCP20N60的Datasheet PDF文件第3页浏览型号FCP20N60的Datasheet PDF文件第4页浏览型号FCP20N60的Datasheet PDF文件第5页浏览型号FCP20N60的Datasheet PDF文件第6页浏览型号FCP20N60的Datasheet PDF文件第7页 
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