Datasheet > FCL30A015

FCL30A015

更新时间： 2024-11-10 23:14:51

品牌	Logo	应用领域
NIEC		肖特基二极管局域网
页数	文件大小	规格书
6页	58K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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FCL30A015 数据手册

SBD T y p e : FCL30A015

OUTLINE DRAWING

FEATURES

*TO-220AB Case

*Fully Molded

*Dual Diodes – Cathode Common

*Extremely Low Forward Voltage Drop

*Oring Diode

*High Surge Capability

Maximum Ratings

Approx Net Weight: 1.75g

FCL30A015

Rating

Symbol

V_RRM

I_O

I_F(RMS)

I_FSM

Unit

Repetitive Peak Reverse Voltage

50 Hz Full Sine Wave

Resistive Load

Average Rectified Output Current

RMS Forward Current

Tc=78°C

33.3

50Hz Full Sine Wave ,1cycle

Non-repetitive

Surge Forward Current

250

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

T_jw

T_stg

Ftor

-40 to +125

recommended torque = 0.5

°C

N•m

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Symbol

I_RM

Conditions

Min. Typ. Max. Unit

Tj= 25°C, V_RM= V_RRM

per arm

Tj= 25°C, I_FM= 15 A

per arm

Peak Forward Voltage

Thermal Resistance

V_FM

0.42

Rth(j-c) Junction to Case

Rth(c-f) Cace to Fin

1.5 °C /W

12 3 4 5 6

中文翻译

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