MOSFET – N-Channel,
SUPERFET) II, Easy-Drive
600 V, 29 A, 125 mW
FCH125N60E
Description
SUPERFET II MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This technology is tailored to minimize
conduction loss, provide superior switching performance, dv/dt rate
and higher avalanche energy. Consequently, SUPERFET II MOSFET
easy−drive series offers slightly slower rise and fall times compared to
the SUPERFET II MOSFET series. Noted by the “E” part number
suffix, this family helps manage EMI issues and allows for easier
design implementation. For faster switching in applications where
switching losses must be at an absolute minimum, please consider the
SUPERFET II MOSFET series.
www.onsemi.com
V
R
MAX
I MAX
D
DS
DS(ON)
600 V
125 mW @ 10 V
29 A
D
G
Features
• Typ. R
= 102 mW
• 650 V @ T = 150°C
DS(on)
J
S
• Ultra Low Gate Charge (Typ. Q = 75 nC)
g
N-CHANNEL MOSFET
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 258 pF)
oss(eff.)
S
D
G
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FCH
125N60E
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FCH125N60E = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
December, 2019 − Rev. 2
FCH125N60E/D