品牌 | Logo | 应用领域 |
京瓷/艾维克斯 - KYOCERA AVX | / | |
页数 | 文件大小 | 规格书 |
7页 | 731K | |
描述 | ||
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between s |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FCH10AU10 | NIEC |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB, TO-220, | |
FCH10E10 | KYOCERA AVX |
获取价格 |
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b | |
FCH10U06 | NIEC |
获取价格 |
10A Avg. 60Volts | |
FCH10U10 | NIEC |
获取价格 |
Schottky Barrier Diode | |
FCH10U15 | NIEC |
获取价格 |
Schottky Barrier Diode | |
FCH10U20 | NIEC |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, | |
FCH110N65F-F155 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,SUPERFET® II,FRFET®,650 V,35 A | |
FCH125N60E | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,SUPERFET® II,Easy Drive,600 V, | |
FCH125N65S3R0-F155 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V | |
FCH130N60 | ONSEMI |
获取价格 |
N 沟道 SuperFET® II MOSFET |