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FBR1010 PDF预览

FBR1010

更新时间: 2024-11-06 22:31:43
品牌 Logo 应用领域
EIC 整流二极管桥式整流二极管局域网快速恢复二极管
页数 文件大小 规格书
2页 22K
描述
FAST RECOVERY BRIDGE RECTIFIERS

FBR1010 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.78Is Samacsys:N
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.3 V最大非重复峰值正向电流:250 A
元件数量:4最大输出电流:10 A
最大重复峰值反向电压:1000 V最大反向恢复时间:0.15 µs
子类别:Bridge Rectifier Diodes表面贴装:NO
Base Number Matches:1

FBR1010 数据手册

 浏览型号FBR1010的Datasheet PDF文件第2页 
FAST RECOVERY  
BRIDGE RECTIFIERS  
FBR1000 - FBR1010  
PRV : 50 - 1000 Volts  
Io : 10 Amperes  
BR10  
0.520 (13.20)  
0.480 (12.20)  
FEATURES :  
0.158 (4.00)  
AC  
* High case dielectric strength  
* High surge current capability  
* High reliability  
0.142 (3.60)  
0.77 (19.56)  
0.73 (18.54)  
* Low reverse current  
0.290 (7.36)  
* Low forward voltage drop  
* Fast switching for high efficiency  
* Ideal for printed circuit board  
0.210 (5.33)  
AC  
0.052 (1.32)  
0.048 (1.22)  
MECHANICAL DATA :  
0.75 (19.1)  
Min.  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per  
MIL - STD 202 , Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
0.30 (7.62)  
0.25 (6.35)  
Dimensions in inches and ( millimeters )  
* Weight : 6.1 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
FBR FBR FBR FBR FBR FBR FBR  
1000 1001 1002 1004 1006 1008 1010  
SYMBOL  
UNIT  
RATING  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100 200 400 600 800 1000 Volts  
70 140 280 420 560 700 Volts  
100 200 400 600 800 1000 Volts  
Maximum DC Blocking Voltage  
Maximum Average Forward Current Tc = 55 °C  
Peak Forward Surge Current Single half sine wave  
Superimposed on rated load (JEDEC Method)  
Current Squared Time at t < 8.3 ms.  
IF(AV)  
10  
Amps.  
IFSM  
I2t  
250  
160  
1.3  
Amps.  
A2S  
Volts  
mA  
Maximum Forward Voltage drop per Diode at IF = 5.0 Amps.  
VF  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 °C  
IR  
10  
Ta = 100 °C  
IR(H)  
Trr  
200  
mA  
Maximum Reverse Recovery Time (Note 1)  
Typical Thermal Resistance per diode (Note 2)  
Operating Junction Temperature Range  
Storage Temperature Range  
150  
250  
500  
ns  
2.5  
°C/W  
°C  
RqJC  
TJ  
- 50 to + 150  
- 50 to + 150  
TSTG  
°C  
Notes :  
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.  
2 ) Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heat  
UPDATE : APRIL 21, 1998  

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