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FB80-C1000G PDF预览

FB80-C1000G

更新时间: 2024-11-12 22:31:43
品牌 Logo 应用领域
EIC 整流二极管桥式整流二极管快速恢复二极管
页数 文件大小 规格书
2页 48K
描述
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS

FB80-C1000G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Contact ManufacturerReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.78Is Samacsys:N
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.3 V最大非重复峰值正向电流:30 A
元件数量:4最大输出电流:1 A
最大重复峰值反向电压:200 V最大反向恢复时间:0.15 µs
子类别:Bridge Rectifier Diodes表面贴装:NO
Base Number Matches:1

FB80-C1000G 数据手册

 浏览型号FB80-C1000G的Datasheet PDF文件第2页 
FAST RECOVERY GLASS  
PASSIVATED BRIDGE RECTIFIERS  
FB40 - FB380/C 1000G  
PRV : 100 - 900 Volts  
Io : 1.0 Amperes  
WOB  
0.39 (10.0)  
0.31 (7.87)  
FEATURES :  
* Glass passivated chip  
0.22 (5.59)  
* High case dielectric strength  
* High surge current capability  
* High reliability  
0.18 (4.57)  
AC  
+
-
1.00 (25.4)  
MIN.  
* Low reverse current  
* Low forward voltage drop  
* Fast switching for high efficiency  
* Ideal for printed circuit board  
0.034 (0.86)  
0.028 (0.71)  
MECHANICAL DATA :  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated leads solderable per  
AC  
-
0.22 (5.59)  
0.18 (4.57)  
AC  
+
0.22 (5.59)  
0.18 (4.57)  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
Dimension in inches and (millimeter)  
* Weight : 1.29 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 C ambient temperature unless otherw ise specified.  
°
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
FB40-C  
1000G  
100  
FB80-C FB125-C FB250-C FB380-C  
SYMBOL  
UNIT  
RATING  
1000G  
1000G  
1000G  
1000G  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Input Voltage R+C -Load  
VRRM  
VRMS  
VDC  
200  
300  
600  
900  
Volts  
Volts  
Volts  
40  
80  
125  
300  
250  
600  
380  
900  
Maximum DC Blocking Voltage  
100  
200  
Maximum Average Forw ard Current For  
1.2  
1.0  
Amps.  
Free Air Operation at Tc = 45 C R+L -Load  
IF(AV)  
°
C -Load  
Peak Forw ard Surge Current Single half sine w ave  
IFSM  
30  
10  
Amps.  
A2S  
on rated load (JEDEC Method) at TJ = 125 C  
°
2t  
Rating for fusing at TJ = 125 C ( t < 100 ms.)  
°
I
R
1.0  
2.0  
4.0  
8.0  
12.0  
200  
t
Maximum Series Resistor C-Load VRMS  
=
10%  
±
W
Maximum load Capacitance  
+ 50%  
-10%  
5000  
2500  
1000  
1.3  
500  
CL  
VF  
F
m
Maximum Forw ard Voltage per Diode at IF = 1.0 Amps.  
Volts  
Maximum Reverse Current at Rated Repetitive  
Peak Voltage per Diode  
10  
IR  
A
m
Maximum Reverse Recovery Time (Note 1)  
Typical Thermal Resistance (Note 2)  
Operating Junction Temperature Range  
Storage Temperature Range  
Trr  
150  
250  
500  
ns  
R JA  
q
36  
C/W  
°
TJ  
- 50 to + 125  
- 50 to + 125  
C
C
°
°
TSTG  
1 ) Measured w ith IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.  
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board w ith, 0.22" x 0.22" (5.5 x 5.5 mm)  
copper Pads.  
Notes :  
UPDATE : JUNE 19,1998  

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