Electrical Characteristics
VDD=15 V and TA=25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
VDD-
VOP
Continuously Operating Voltage
28.5
V
OFF
4.3
4.0
0.1
VDD-ON
Turn-On Threshold Voltage
Turn-Off Threshold Voltage
4.8
4.5
0.3
5.3
5.0
0.5
V
V
V
VDD-OFF
VDD-HYST VDD-ON – VDD-OFF
VDD=15 V, LPC=50 kHz, MOSFET
CISS=6000 pF
IDD-OP Operating Current
7
8
mA
IDD-GREEN Operating Current in Green Mode VDD=15 V
1.1
150
27.5
2.1
1.3
200
28.5
2.4
mA
A
V
IDD-ST
Startup Current
VDD< VDD-ON
VDD-OVP
VDD Over-Voltage Protection
26.0
1.8
40
VDD-OVP-HYST Hysteresis Voltage for VDD OVP
tVDD-OVP VDD OVP Debounce Time
Output Driver Section
V
70
100
s
VZ
Gate Output Clamp Voltage
10
12
14
V
V
VOL
VOH
Output Voltage Low
Output Voltage High
VDD=6 V, IO=50 mA
0.5
VDD=6 V, IO=50 mA
4
V
VDD=12 V, CL=6 nF, OUT=2 V~9 V
VDD=6 V, CL=6 nF, OUT=0.4 V~4 V
VDD=12 V, CL=6 nF, OUT=9 V~2 V
VDD=6 V, CL=6 nF, OUT=4 V~0.4 V
30
70
20
20
70
120
50
120
170
100
130
ns
ns
ns
ns
tR
Rising Time
Falling Time
tF
tPD_HIGH_LPC
tPD_LOW_LPC
90
Propagation Delay to Turn-on
Gate (LPC Trigger)
tR: 0 V~2 V, VDD=12 V
250
180
ns
ns
Propagation Delay to Turn-off
Gate (LPC Trigger)(3)
tF: 100%~90%, VDD=12 V
tMAX-PERIOD Limitation between LPC Rising Edge to Gate Falling Edge
VPMOS-ON Internal PMOS Turn-On to Pull-HIGH Gate(3)
22.5
25.0
8.3
28.0
2.8
s
V
VPMOS-ON-
Hysteresis Voltage On(3)
0.9
2.2
V
s
V
HYS
tINHIBIT
Gate Inhibit Time
M2 Option (Enable)
VDD=5 V
1.6
4.5
VGATE-PULL-
HIGH
Gate Pull-HIGH Voltage
LPC Section
tBNK
Blanking Time for Charging CT
400
500
1
600
ns
s
V
tDELAY-COMP Sampling Continuous Time for tBNK Compensation(3)
VLPC-SOURCE LPC Lower Clamp Voltage
ILPC-SOURCE LPC Source Current
Source ILPC=5 µA
VLPC=0 V
0.1
40
0.2
80
0.3
120
A
VLPC-EN=VLPC-HIGH x 0.83 at VLPC-
HIGH x 0.83< 2 V, VO=15 V,
VO=VDD, VLPC-HIGH=1.2 V
Threshold Voltage to Enabled SR
Switching
VLPC-EN
0.85
1.00
1.15
0.9
V
Threshold Clamp Voltage to
VEN-CLAMP
VLPC-EN=2 V at VLPC-HIGH x 0.83 >
2 V
2
V
V
Enable SR Switching
Threshold Voltage on LPC Rising Decrease VLPC from 0.05
VLPC-TH-HIGH
0.7
0.8
350
Edge
Blanking Time at the Falling Edge Prevent LPC Spike to Turn-Off
of VLPC Gate
Vo+0.05, VO=15 V, VO=VDD
tBNK-DIS
ns
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