Datasheet > F6N80

F6N80

更新时间： 2024-11-10 01:24:15

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
7页	1303K
描述
800V N-Channel MOSFET

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F6N80 数据手册

SSF6N80F

800V N-Channel MOSFET

Main Product Characteristics

V_DSS

R_DS(on)

I_D

800V

2.2Ω (typ.)

5.5A

MarkingandPin

SchematicDiagram

Assignment

TO220F

Features and Benefits



AdvancedMOSFETprocesstechnology

Special designed for PWM, load switching and

generalpurposeapplications



Ultralowon-resistancewithlowgatecharge

Fastswitching andreversebodyrecovery

150℃operating temperature

Leadfreeproduct

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with

high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable

devicefor useinpower switching applicationandawidevarietyof other applications.

Absolute Max Rating

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Max.

5.5

Units

Continuous Drain Current, V_GS@ 10V①

Pulsed Drain Current②

3.2

W/°C

Power Dissipation③

P_D@T_C= 25°C

Linear Derating Factor

0.41

800

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

± 30

507

E_AS

Single Pulse Avalanche Energy @ L=33.5mH

Avalanche Current @ L=33.5mH

Operating Junction and Storage Temperature Range

I_AS

5.5

T_JT_STG

-55 to +150

°C

www.goodark.com

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Rev.1.0

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