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F6N80 PDF预览

F6N80

更新时间: 2024-11-07 01:24:15
品牌 Logo 应用领域
固锝 - GOOD-ARK /
页数 文件大小 规格书
7页 1303K
描述
800V N-Channel MOSFET

F6N80 数据手册

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SSF6N80F  
800V N-Channel MOSFET  
Main Product Characteristics  
VDSS  
RDS(on)  
ID  
800V  
2.2Ω (typ.)  
5.5A  
MarkingandPin  
SchematicDiagram  
Assignment  
TO220F  
Features and Benefits  
AdvancedMOSFETprocesstechnology  
Special designed for PWM, load switching and  
generalpurposeapplications  
Ultralowon-resistancewithlowgatecharge  
Fastswitching andreversebodyrecovery  
150operating temperature  
Leadfreeproduct  
Description  
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with  
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable  
devicefor useinpower switching applicationandawidevarietyof other applications.  
Absolute Max Rating  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Parameter  
Max.  
5.5  
Units  
Continuous Drain Current, VGS @ 10V①  
Continuous Drain Current, VGS @ 10V①  
Pulsed Drain Current②  
A
3.2  
22  
51  
W
W/°C  
V
Power Dissipation③  
PD @TC = 25°C  
Linear Derating Factor  
0.41  
800  
VDS  
Drain-Source Voltage  
VGS  
Gate-to-Source Voltage  
± 30  
507  
V
EAS  
Single Pulse Avalanche Energy @ L=33.5mH  
Avalanche Current @ L=33.5mH  
Operating Junction and Storage Temperature Range  
mJ  
A
IAS  
5.5  
TJ TSTG  
-55 to +150  
°C  
www.goodark.com  
Page 1 of 7  
Rev.1.0  

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