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F4400R12KS4V3 PDF预览

F4400R12KS4V3

更新时间: 2024-01-25 20:48:44
品牌 Logo 应用领域
其他 - ETC 双极性晶体管
页数 文件大小 规格书
9页 145K
描述
IGBT Module

F4400R12KS4V3 数据手册

 浏览型号F4400R12KS4V3的Datasheet PDF文件第2页浏览型号F4400R12KS4V3的Datasheet PDF文件第3页浏览型号F4400R12KS4V3的Datasheet PDF文件第4页浏览型号F4400R12KS4V3的Datasheet PDF文件第5页浏览型号F4400R12KS4V3的Datasheet PDF文件第6页浏览型号F4400R12KS4V3的Datasheet PDF文件第7页 
Technische Information / Technical Information  
IGBT-Module  
F4-400R12KS4 B2  
IGBT-Modules  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
VCES  
V
Kollektor-Emitter-Sperrspannung  
1200  
collector-emitter voltage  
IC,nom.  
400  
570  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
T
T
C = 80°C  
C = 25 °C  
IC  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t
P = 1 ms, TC = 80°C  
ICRM  
800  
3000  
+/- 20V  
400  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
TC=25°C, Transistor  
Ptot  
VGES  
IF  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
Dauergleichstrom  
DC forward current  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
800  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
A2s  
V
VR = 0V, tp = 10ms, TVj = 125°C  
RMS, f = 50 Hz, t = 1 min.  
65.000  
2.500  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 400A, VGE = 15V, Tvj = 25°C  
VCE sat  
-
3,20  
3,70  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
IC = 400A, VGE = 15V, Tvj = 125°C  
-
3,85  
-
Gate-Schwellenspannung  
gate threshold voltage  
I
C = 16 mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
Cies  
Cres  
QG  
4,5  
5,5  
26  
1,7  
4,2  
-
6,5  
V
Eingangskapazität  
input capacitance  
f = 1MHz,T = 25°C,VCE = 25V, VGE = 0V  
-
-
-
-
-
-
-
nF  
nF  
µC  
mA  
nA  
vj  
Rückwirkungskapazität  
f = 1MHz,T = 25°C,VCE = 25V, VGE = 0V  
vj  
reverse transfer capacitance  
Gateladung  
gate charge  
VGE = -15V ... + 15V, VCE = 600V  
-
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
V
CE = 1200V, VGE = 0V, Tvj = 25°C  
CE = 0V, VGE = 20V, Tvj = 25°C  
ICES  
5
Gate-Emitter Reststrom  
V
IGES  
-
400  
gate-emitter leakage current  
prepared by: A.Schulz  
date of publication : 2001-11-29  
revision: 3  
approved by: M.Hierholzer  
F4-400R12KS4 B2_V3.xls  
2001-11-29  
1/9  

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