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F1510 PDF预览

F1510

更新时间: 2024-11-07 22:31:19
品牌 Logo 应用领域
POLYFET 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
2页 39K
描述
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F1510 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.72配置:Single
最大漏极电流 (Abs) (ID):1.6 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高工作温度:200 °C极性/信道类型:N-CHANNEL
子类别:FET General Purpose PowerBase Number Matches:1

F1510 数据手册

 浏览型号F1510的Datasheet PDF文件第2页 
polyfet rf devices  
F1510  
General Description  
PATENTED GOLD METALIZED  
SILICON GATE ENHANCEMENT MODE  
RF POWER VDMOS TRANSISTOR  
Silicon VDMOS and LDMOS  
transistors designed specifically  
for broadband RF applications.  
Suitable for Military Radios,  
Cellular and Paging Amplifier Base  
Stations, Broadcast FM/AM, MRI,  
Laser Driver and others.  
10Watts Single Ended  
Package Style AP  
TM  
"Polyfet" process features  
gold metal for greatly extended  
lifetime. Low output capacitance  
HIGH EFFICIENCY, LINEAR,  
HIGH GAIN, LOW NOISE  
and high F enhance broadband  
t
performance  
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)  
Total  
Junction to  
Maximum  
Junction  
Temperature  
Storage  
DC Drain  
Current  
Drain to  
Gate  
Voltage  
Drain to  
Source  
Voltage  
Gate to  
Source  
Voltage  
Device  
Dissipation  
Case Thermal  
Resistance  
Temperature  
o
o
o
o
30 Watts  
6
1.6 A  
70 V  
70V  
C/W  
200 C  
-65 C to 150 C  
30V  
RF CHARACTERISTICS (  
10WATTS OUTPUT )  
SYMBOL  
Gps  
PARAMETER  
MIN  
12  
TYP  
MAX  
UNITS  
dB  
TEST CONDITIONS  
Common Source Power Gai  
Drain Efficiency  
Idq = 0.4 A, Vds = 28.0V, F = 500 MHz  
Idq = 0.4 A, Vds = 28.0V, F = 500 MHz  
55  
%
h
VSWR  
Load Mismatch Toleranc  
20:1  
Relative Idq = 0.4 A, Vds = 28.0V, F = 500 MHz  
ELECTRICAL CHARACTERISTICS (EACH SIDE)  
SYMBOL  
Bvdss  
Idss  
PARAMETER  
MIN  
65  
TYP  
MAX  
UNITS  
V
TEST CONDITIONS  
Ids = 0.02 A,  
Vds = 28.0 V, Vgs = 0V  
Drain Breakdown Voltag  
Zero Bias Drain Curren  
Vgs = 0V  
0.4  
1
mA  
uA  
Igss  
Gate Leakage Curren  
Vds = 0 V,  
Vgs = 30V  
Vgs = Vds  
Vgs  
Gate Bias for Drain Curren  
Forward Transconductanc  
Saturation Resistanc  
1
7
Ids =0.04 A,  
V
Mho  
Ohm  
Amp  
pF  
gM  
0.4  
2.1  
2.4  
18  
2
Vds = 10V, Vgs = 5V  
Rdson  
Idsat  
Ciss  
Vgs = 20V, Ids = 2A  
Saturation Curren  
Vgs = 20V, Vds = 10V  
Common Source Input Capacitanc  
Common Source Feedback Capacitanc  
Common Source Output Capacitanc  
Vds = 28.0 V, Vgs = 0V, F = 1 MHz  
Vds = 28.0 V, Vgs = 0V, F = 1 MHz  
Vds = 28.0 V, Vgs = 0V, F = 1 MHz  
Crss  
pF  
Coss  
12  
pF  
REVISION 8/1/97  
POLYFET RF DEVICES  
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com  

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR