Datasheet > F1022

F1022

更新时间： 2024-11-13 22:40:51

品牌	Logo	应用领域
POLYFET		晶体晶体管栅
页数	文件大小	规格书
2页	42K
描述
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

F1022 数据手册

polyfet rf devices

F1022

General Description

PATENTED GOLD METALIZED

SILICON GATE ENHANCEMENT MODE

RF POWER VDMOS TRANSISTOR

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Military Radios,

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

80Watts Gemini

Package Style AK

"Polyfet" process features

gold metal for greatly extended

lifetime. Low output capacitance

HIGH EFFICIENCY, LINEAR,

HIGH GAIN, LOW NOISE

and high F enhance broadband

performance

ABSOLUTE MAXIMUM RATINGS (TC = 25 C)

Total

Junction to

Maximum

Junction

Temperature

Storage

DC Drain

Current

Drain to

Gate

Voltage

Drain to

Source

Voltage

Gate to

Source

Voltage

Device

Dissipation

Case Thermal

Resistance

Temperature

290 Watts

0.6

12 A

70 V

70V

C/W

200 C

-65 C to 150 C

30V

RF CHARACTERISTICS (

80WATTS OUTPUT )

SYMBOL

Gps

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Common Source Power Gai

Drain Efficiency

Idq = 1.2 A, Vds = 28.0V, F = 400 MHz

VSWR

Load Mismatch Toleranc

20:1

Relative Idq = 1.2 A, Vds = 28.0V, F = 400 MHz

ELECTRICAL CHARACTERISTICS (EACH SIDE)

SYMBOL

Bvdss

Idss

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Ids = 0.15 A,

Vds = 28.0 V, Vgs = 0V

Drain Breakdown Voltag

Zero Bias Drain Curren

Vgs = 0V

Igss

Gate Leakage Curren

Vds = 0 V,

Vgs = 30V

Vgs = Vds

Vgs

Gate Bias for Drain Curren

Forward Transconductanc

Saturation Resistanc

Ids = 0.3 A,

Mho

Ohm

Amp

2.4

0.5

16.5

Vds = 10V, Vgs = 5V

Rdson

Idsat

Ciss

Vgs = 20V, Ids = 12A

Saturation Curren

Vgs = 20V, Vds = 10V

Common Source Input Capacitanc

Common Source Feedback Capacitanc

Common Source Output Capacitanc

Vds = 28.0 V, Vgs = 0V, F = 1 MHz

Crss

Coss

REVISION 8/1/97

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

中文翻译

下载PDF

与F1022相关器件

型号	品牌	获取价格	描述	数据表
F10231DC	FAIRCHILD	获取价格	D Flip-Flop, 10K Series, 2-Func, Positive Edge Triggered, 1-Bit, Complementary Output, ECL
F102450LC3B	IVO	获取价格	Totalizers electromechanic
F102450LC3D	IVO	获取价格	Totalizers electromechanic
F102450LC5B	IVO	获取价格	Totalizers electromechanic
F102450LC5D	IVO	获取价格	Totalizers electromechanic
F102450LC8B	IVO	获取价格	Totalizers electromechanic
F102450LC8D	IVO	获取价格	Totalizers electromechanic
F102450LC9B	IVO	获取价格	Totalizers electromechanic
F102450LC9D	IVO	获取价格	Totalizers electromechanic
F10-250	TRIAD	获取价格	Split Bobbin Power Transformer, 2.5VA, ROHS COMPLIANT