Wideband 4 GHz, 36 dB Isolation at 1 GHz,
CMOS 1.65 V to 2.75 V, Dual SPDT
ADG936/ADG936-R
FEATURES
FUNCTIONAL BLOCK DIAGRAMS
Wideband switch: −3 dB @ 4 GHz
ADG936 absorptive dual SPDT
ADG936-R reflective dual SPDT
High off isolation (36 dB @ 1 GHz)
Low insertion loss (0.9 dB dc to 1 GHz)
Single 1.65 to 2.75 V power supply
CMOS/LVTTL control logic
RF1A
RF2A
RF1B
RF2B
RF1A
RF2A
RF1B
RF2B
RFCA
INA
RFCA
INA
50Ω
ADG936-R
50Ω
ADG936
20-lead TSSOP and 4 mm × 4 mm LFCSP package
Low power consumption (1 µA max)
RFCB
INB
RFCB
INB
APPLICATIONS
50Ω
Wireless communications
General-purpose RF switching
Dual-band applications
High speed filter selection
Digital transceiver front end switch
IF switching
50Ω
Figure 1.
Figure 2.
Tuner modules
Antenna diversity switching
GENERAL DESCRIPTION
LVTTL compatible. The low power consumption of these
CMOS devices makes them ideally suited for wireless
applications and general-purpose high frequency switching.
The ADG936/ADG936-R are wideband analog switches that
comprise two independently selectable SPDT switches using a
CMOS process to provide high isolation and low insertion loss
to 1 GHz. The ADG936 is an absorptive/matched dual SPDT
with 50 Ω terminated shunt legs; the ADG936-R is a reflective
dual SPDT. These devices are designed such that the isolation is
high over the dc to 1 GHz frequency range. They have on-board
CMOS control logic, eliminating the need for external
PRODUCT HIGHLIGHTS
1. –36 dB off isolation @ 1 GHz.
2. 0.9 dB insertion loss @ 1 GHz.
3. 20-lead TSSOP and 4 mm × 4 mm LFCSP package.
controlling circuitry. The control inputs are both CMOS and
–10
–0.3
–0.4
–0.5
–0.6
–0.7
–0.8
–0.9
–1.0
–1.1
–1.2
–1.3
–1.4
–1.5
–1.6
–1.7
–1.8
–1.9
–2.0
–2.1
–2.2
–2.3
–2.4
–2.5
–2.6
–2.7
–2.8
–2.9
–3.0
V
= 2.5V
DD
= 25°C
T
A
–20
–30
–40
–50
–60
–70
–80
V
= 2.5V
DD
S21
S12
T
= 25°C
A
10k
100k
1M
10M
100M
1G
10G
10k
100k
1M
10M
100M
1G
10G
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 3. Off Isolation vs. Frequency
Figure 4. Insertion Loss vs. Frequency
Rev. 0
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