Datasheet > ETL1506S-M3

ETL1506S-M3

更新时间： 2024-11-07 10:16:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	193K
描述
Ultrafast Rectifier, 15 A FRED Pt

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ETL1506S-M3 数据手册

New Product

VS-ETL1506S-M3, VS-ETL1506-1-M3

Vishay Semiconductors

Ultrafast Rectifier, 15 A FRED Pt^®

FEATURES

• State of the art low forward voltage drop

• Ultrafast recovery time

• 175 °C operating junction temperature

• Low leakage current

VS-ETL1506S-M3

VS-ETL1506-1-M3

• Compliant to RoHS Directive 2002/95/EC

Base

cathode

• Halogen-free according to IEC 61249-2-21

definition

• Designed and qualified according to JEDEC-JESD47

DESCRIPTION/APPLICATIONS

State of the art, ultralow V_F, soft-switching ultrafast rectifiers

optimized for Discontinuous (Critical) Mode (DCM) Power

Factor Correction (PFC).

N/C

Anode

D²PAK

TO-262

The minimized conduction loss, optimized stored charge

and low recovery current minimized the switching losses

and reduce over dissipation in the switching element and

snubbers.

PRODUCT SUMMARY

The device is also intended for use as a freewheeling diode

in power supplies and other power switching applications.

Package

TO-263AB (D²PAK), TO-262AA

I_F(AV)

15 A

600 V

V_R

APPLICATIONS

AC/DC SMPS 70 W to 400 W

e.g. laptop and printer AC adaptors, desktop PC, TV and

monitor, games units, and DVD AC/DC power supplies.

V_Fat I_F

1.07 V

60 ns

t_rr(typ.)

T_Jmax.

Diode variation

175 °C

Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

MAX.

600

UNITS

Repetitive peak reverse voltage

Average rectified forward current

Non-repetitive peak surge current

I_F(AV)

T_C= 152 °C

T_C= 25 °C

I_FSM

200

Operating junction and storage

temperatures

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 15 A

600

0.99

0.85

0.01

1.07

0.91

Forward voltage

V_F

I_R

I_F= 15 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

100

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

8.0

Document Number: 93579

Revision: 19-Apr-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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