Datasheet > ESDR7534W1T2G

ESDR7534W1T2G

更新时间： 2023-09-03 20:30:25

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	163K
描述
ESD 保护器，4 线路，采用 SC88 封装

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中文翻译

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数据手册

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ESDR7534W1T2G 数据手册

ESDR7534

IEC61000−4−2 Waveform

IEC 61000−4−2 Spec.

peak

First Peak

Current

(A)

100%

90%

Test Volt-

age (kV)

Current at

30 ns (A)

Current at

60 ns (A)

Level

7.5

I @ 30 ns

22.5

I @ 60 ns

10%

= 0.7 ns to 1 ns

Figure 3. IEC61000−4−2 Spec

Device

Under

Test

Oscilloscope

ESD Gun

50 W

Cable

50 W

Figure 4. Diagram of ESD Test Setup

The following is taken from Application Note

AND8308/D − Interpretation of Datasheet Parameters

for ESD Devices.

systems such as cell phones or laptop computers it is not

clearly defined in the spec how to specify a clamping voltage

at the device level. ON Semiconductor has developed a way

to examine the entire voltage waveform across the ESD

protection diode over the time domain of an ESD pulse in the

form of an oscilloscope screenshot, which can be found on

the datasheets for all ESD protection diodes. For more

information on how ON Semiconductor creates these

screenshots and how to interpret them please refer to

AND8307/D.

ESD Voltage Clamping

For sensitive circuit elements it is important to limit the

voltage that an IC will be exposed to during an ESD event

to as low a voltage as possible. The ESD clamping voltage

is the voltage drop across the ESD protection diode during

an ESD event per the IEC61000−4−2 waveform. Since the

IEC61000−4−2 was written as a pass/fail spec for larger

1.E−02

1.E−03

1.E−04

1.E−05

1.E−06

1.E−07

1.E−08

1.E−09

1.E−10

1.E−11

−1

VOLTAGE (V)

VBias (V)

Figure 5. IV Characteristic Curve

Figure 6. CV Characteristic Curve

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1 234 5 6 7

中文翻译

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