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ESDBL7471BP PDF预览

ESDBL7471BP

更新时间: 2023-12-06 20:03:43
品牌 Logo 应用领域
先科 - SWST 二极管
页数 文件大小 规格书
3页 188K
描述
静电保护二极管

ESDBL7471BP 数据手册

 浏览型号ESDBL7471BP的Datasheet PDF文件第2页浏览型号ESDBL7471BP的Datasheet PDF文件第3页 
ESDBL7471BP  
ESD Protection Diode  
PINNING  
DESCRIPTION  
Anode  
PIN  
1
Features  
• Low capacitance  
• Low leakage current  
• Low clamping voltage  
Anode  
2
1
2
Transparent top view  
Simplified outline DFN1006-2B and symbol  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
PPK  
Value  
80  
Unit  
W
Peak Pulse Power (tp = 8/20 µs)  
Peak Pulse Current (tp = 8/20 µs)  
IPP  
5
A
Air  
Contact  
± 20  
± 20  
ESD (IEC61000-4-2)  
VESD  
KV  
Power Dissipation  
PD  
Tj  
300  
mW  
Operation Junction Temperature Range  
Storage Temperature Range  
- 55 to + 125  
- 55 to + 150  
Tstg  
Thermal Resistance  
Parameter  
Symbol  
RθJA  
Value  
400  
Unit  
Typical Thermal Resistance Junction to Ambient 1)  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
/W  
Characteristics at Ta = 25  
Parameter  
Symbol  
VRWM  
Min.  
-
Typ.  
-
Max.  
5.3  
Unit  
Reverse Stand-Off Voltage  
V
V
Reverse Breakdown Voltage  
at IR = 1 mA  
V(BR)R  
IR  
7
-
-
-
-
-
Reverse Current  
at VR = 5.3 V  
50  
15  
nA  
V
Clamping Voltage  
VC  
-
at IPP = 1 A, tp = 8/20 µs  
ESD Clamping Voltage  
at ITLP = 4 A, tp = 0.2/100 ns  
at ITLP =16 A, tp = 0.2/100 ns  
VCL  
-
-
16.7  
31.6  
-
-
V
Junction Capacitance  
at VR = 0 V, f = 1 MHz  
Dynamic Resistance 1)  
Cj  
-
-
-
0.4  
-
pF  
Rdyn  
1.2  
1) Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A .  
1 / 3  
®
Dated: 22/08/2023 Rev : 02  

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