ESDBLH3V3HP
ESD Protection Diode
PINNING
DESCRIPTION
Anode
PIN
1
Features
• Bidirectional device
• Low clamping voltage
• Low capacitance
Anode
2
1
2
Transparent top view
Simplified outline DFN1006-2H and symbol
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
PPK
Value
60
Unit
W
Peak Pulse Power (tp = 8/20 µs)
Peak Pulse Current (tp = 8/20 µs)
IEC61000-4-2 (ESD)
IPP
7
A
Air
Contact
± 30
± 30
VESD
KV
Junction Temperature
Tj
150
℃
℃
Storage Temperature Range
Tstg
- 55 to + 150
Characteristics at Ta = 25℃
Parameter
Symbol
VRWM
Min.
-
Typ.
-
Max.
3.3
Unit
Working Peak Reverse Voltage
V
V
Reverse Breakdown Voltage
at IT = 1 mA
V(BR)R
4
-
-
-
-
6
0.4
9
Reverse Current
at VRWM = 3.3 V
IR
μA
Clamping Voltage
at IPP = 7 A, tp = 8/20 µs
VC
-
V
ESD Clamping Voltage
at ITLP = 4 A, tp = 0.2/100 ns
at ITLP =16 A, tp = 0.2/100 ns
VCL
-
-
6.4
10.2
-
-
V
Junction Capacitance
at VR = 0 V, f = 1 MHz
Dynamic Resistance 1)
Cj
-
-
-
15
-
pF
Rdyn
0.32
Ω
1) Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A.
1 / 4
®
Dated: 28/12/2021 Rev : 02