Datasheet > ESDA8V2-1J

ESDA8V2-1J

更新时间： 2024-09-18 17:15:43

品牌	Logo	应用领域
友台半导体 - UMW		脉冲
页数	文件大小	规格书
5页	313K
描述
反向截止电压（Vrwm）:5V;极性/通道数（Channel）:1-Line，Unidirectional;击穿电压（VBR):8.2V;峰值脉冲电流(Ipp):1A;最大钳位电压(Vc):11V;电容（Cj）:210pF

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ESDA8V2-1J 数据手册

UMW

ESDA8V2-1J

Description

The UMW ESDA8V2-1J is a unidirectional

single line Transil diode designed specifically for

the protection of integrated circuits in portable

equipment and miniaturized electonic devices

subject to EOS and ESD transient overvoltages.

Features

Benefits

Breakdown voltage V = 8.2 V

High EOS and ESD protection level

Unidirectional device

High integration

High peak power dissipation: 500 W

(8/20 µs waveform)

Suitable for high density boards

ESD protection level better than

IEC 61000-4-2, level 4:

30 kV contact discharge

Low leakage current (< 0.5 µA @ 5 V)

Applications

Complies with the following standards:

IEC 61000-4-2 level 4

This product is particularly recommended for the

protection of power supply lines of portable

devices, where EOS and ESD transient

overvoltage protection in sensitive equipment is

required, such as:

–

15 kV (air discharge)

8 kV (contact discharge)

MIL STD 883G - Method 3015-7: class 3B

– HBM (human body model): ≥8kV

Computers

Printers

Communication systems

Cellular phone handsets and accessories

Video equipment

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5

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