Datasheet > ESD5Z36T1

ESD5Z36T1

更新时间： 2022-05-13 13:27:22

品牌	Logo	应用领域
鲁光 - LGE		二极管电视电子便携式
页数	文件大小	规格书
4页	216K
描述
Single Line TVS Diode For ESD Protection Portable Electronics

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数据手册

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ESD5Z36T1 数据手册

ESD5Z03T1-ESD5Z36T1

Single Line TVS Diode For ESD Protection Portable Electronics

Voltage:3~36 Volts

Power:120 Watts

SOD523

Features

120 Watts peak pules power( tp=8/20µs)

Small package for use in portable electronics

Suitable replacement for MLV’S in ESD protection applications

Low clamping voltage and leakage current

Pb free product are available : 99% Sn above can meet RoHS

environment substance directive request

Applications

Case: SOD-523 plastic

Terminals : Solderable per MIL-STD-750,Method 2026

Approx Weight: 0.0014 grams

Marking : ESD5Z03T1 : KD

ESD5Z05T1 : KE

ESD5Z08T1 : KR

Dimensions in inches and (millimeters)

ESD5Z12T1 : LE

ESD5Z15T1 : LM

ESD5Z24T1 : LZ

ESD5Z36T1: MP

MAXIMUMRATINGSANDELECTRICALCHATACTERISTICS

ABSOLUTE MAXIMUM RATING

Rating

Peak Pulse Power (tp=8/20 µs)

ESD Voltage

Symbol

P_{P K}

Value

120

Units

^OC

V_{E S D}

T_J

Operating Temperature

-50^OC to 150 ^OC

Storage Temperature

^OC

T_{S TG}

ELECTRICAL CHARA CTERISTICS

ESD5Z03T1

Parameter

Symbol

V_{RW M}

V_{B R}

Conditions

Min.

Typical

Max.

3.3

Units

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

I_{B R}=1mA

V_R=3.3V

µA

I_R

125

Clamping Voltage(8/20 µs)

V_C

I_{P P}=1A

Off State Junction Capacitance

C_J

0Vdc Bias=f=1MHz

3Vdc Bias=f=1MHz

180

100

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mail:lge@luguang.cn

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