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ESD0P4RFLE6327XTSA1 PDF预览

ESD0P4RFLE6327XTSA1

更新时间: 2024-11-18 14:50:07
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网二极管
页数 文件大小 规格书
7页 537K
描述
Trans Voltage Suppressor Diode, 50V V(RWM), Unidirectional, 2 Element, Silicon, 1.20 X 0.80 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, ULTRA SMALL, LEADLESS, TSLP-4-7, 4 PIN

ESD0P4RFLE6327XTSA1 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:R-XBCC-N4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.98最大击穿电压:9 V
最大钳位电压:6 V配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-XBCC-N4JESD-609代码:e4
湿度敏感等级:1元件数量:2
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大重复峰值反向电压:50 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Gold (Au)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

ESD0P4RFLE6327XTSA1 数据手册

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ESD0P4RFL  
RF ESD Protection Diodes  
ESD protection of RF antenna /  
interfaces or ultra high speed data lines acc. to:  
IEC61000-4-2 (ESD): 15 KV (air / contact)  
IEC61000-4-4 (EPT): 40 A (5/50 ns)  
IEC61000-4-5 (surge): 5 A (8/20 µs)  
Very low line capacitance: 0.4 pF @ 1 GHz  
( 0.2 pF per diode)  
Ultra low series inductance: 0.4 nH per diode  
Very low clamping voltage  
Ultra small leadless package:1.2 x 0.8 x 0.39 mm³  
Pb-free (RoHS compliant) package  
Applications in anti-parallel configuration  
For low RF signal levels without superimposed  
DC voltage: e.g. GPS, XM-Radio, Sirius, DVB,  
DMB, DAB, Remote Keyless Entry  
Applications in rail-to-rail configuration  
For high RF signal levels or low RF signal levels  
with superimposed DC voltage: e.g. HDMI, S-ATA,  
Gbit Ethernet  
ESD0P4RFL  
4
3
D1  
D2  
1
2
Type  
ESD0P4RFL  
Package  
TSLP-4-7  
Configuration  
anti-parallel  
Marking  
E4  
2011-06-27  
1

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