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ESAD25-02N PDF预览

ESAD25-02N

更新时间： 2024-01-16 23:41:05
品牌 Logo 应用领域
THINKISEMI 快速恢复二极管局域网
页数 文件大小 规格书
2页 206K
描述
16.0 Ampere Dual Doubler Tandem Polarity Fast Recovery Rectifier Diodes

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中文翻译

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ESAD25-02N 技术参数

生命周期：Obsolete零件包装代码：SC-65
包装说明：R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.84
其他特性：HIGH RELIABILITY应用：FAST RECOVERY
外壳连接：ANODE配置：COMMON ANODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.3 VJESD-30 代码：R-PSFM-T3
最大非重复峰值正向电流：120 A元件数量：2
相数：1端子数量：3
最高工作温度：150 °C最低工作温度：-40 °C
最大输出电流：15 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
认证状态：Not Qualified最大重复峰值反向电压：200 V
最大反向电流：100 µA最大反向恢复时间：0.4 µs
子类别：Rectifier Diodes表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
Base Number Matches：1

ESAD25-02N 数据手册

 浏览型号ESAD25-02N的Datasheet PDF文件第2页 
ESAD25-02D thru ESAD25-06D  
®
ESAD25-02D thru ESAD25-06D  
Pb Free Plating Product  
16.0 Ampere Dual Doubler Tandem Polarity Fast Recovery Rectifier Diodes  
Unit : inch (mm)  
TO-247AD/TO-3P  
Features  
0.640(16.25)  
0.620(15.75)  
0.199(5.05)  
0.175(4.45)  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency  
Low forward voltage drop  
0.142(3.60)  
0.125(3.20)  
Glass passivated with high current capability  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters/Solar Inverters  
ꢀ
ꢀ
ꢀ
0.095(2.40)  
0.087(2.20)  
0.070(1.80)  
Plating Power Supply,SMPS and UPS  
0.126(3.20)  
0.110(2.80)  
0.050(1.25)  
0.045(1.15)  
Car Audio Amplifiers and Sound Device Systems  
0.030(0.75)  
0.017(0.45)  
Mechanical Data  
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-3P/TO-247AD  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
0.225(5.70)  
0.204(5.20)  
0.225(5.70)  
0.204(5.20)  
Case  
Case  
Case  
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 5.6 gram approximately  
Doubler  
Negative  
Positive  
Common Cathode Common Anode Tandem Polarity  
Suffix "C" Suffix "N" Suffix "D"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
ESAD25-04C ESAD25-06C  
ESAD25-04N ESAD25-06N  
ESAD25-04D ESAD25-06D  
ESAD25-02C  
ESAD25-02N  
ESAD25-02D  
UNIT  
SYMBOL  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified  
16.0  
A
A
V
IF(AV)  
Current T  
C
=100oC  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
175  
150  
Maximum Instantaneous Forward Voltage  
@ 8.0 A  
V
F
0.98  
1.3  
1.7  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
J
=25oC  
uA  
uA  
nS  
10.0  
250  
I
R
J
=125oC  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
90  
pF  
oCW  
C
J
R
JC  
2.2  
Operating Junction and Storage  
Temperature Range  
oC  
-55 to + 150  
T
J
, TSTG  
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com/  
Rev.04/2014  
© 2006 Thinki Semiconductor Co.,Ltd.  
12

中文翻译

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ESAD25-06C THINKISEMI

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ESAD25-06D THINKISEMI

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ESAD25C FUJI

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