5秒后页面跳转
ESAD25M-04C PDF预览

ESAD25M-04C

更新时间: 2024-11-28 20:56:19
品牌 Logo 应用领域
富士电机 - FUJI 高压快速恢复二极管局域网
页数 文件大小 规格书
3页 68K
描述
Rectifier Diode, 1 Phase, 2 Element, 15A, 400V V(RRM), Silicon, FULL PACK-3

ESAD25M-04C 技术参数

生命周期:Obsolete包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
其他特性:HIGH RELIABILITY应用:HIGH VOLTAGE FAST RECOVERY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:120 A
元件数量:2相数:1
端子数量:3最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.4 µs
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

ESAD25M-04C 数据手册

 浏览型号ESAD25M-04C的Datasheet PDF文件第2页浏览型号ESAD25M-04C的Datasheet PDF文件第3页 
ESAD25M(C,N,D) (15A) (200V to 400V / 15A)  
Outline drawings, mm  
FAST RECOVERY DIODE  
5.5±0.3  
15.5 ±0.3  
ø3.2 ±0.2  
3.2+0.3  
2.1±0.3  
1.6±0.3  
1.1+00.2.1  
3.5 ±0.2  
5.45±0.2  
5.45 ±0.2  
0.6+0.2  
Features  
Insulated package by fully molding  
J EDEC  
EIAJ  
High voltage by mesa design  
Connection diagram  
High reliability  
2
ESAD25M-  
ESAD25M-  
ESAD25M-  
C
N
D
1
3
3
Applications  
High speed switching  
2
1
1
2
3
Maximum ratings and characteristics  
Absolute maximum ratings  
Rating  
Symbol  
VRRM  
VRSM  
Viso  
IO  
Conditions  
Item  
Unit  
-02  
-04  
200  
400  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
Isolating voltage  
V
V
250  
450  
Terminals-to-case, AC.1 min.  
Square wave, duty=1/2, Tc=98°C  
Sine wave 10ms  
V
1500  
15*  
120  
Average output current  
Surge current  
A
IFSM  
Tj  
A
Operating junction temperature  
Storage temperature  
°C  
°C  
-40 to +150  
-40 to +150  
Tstg  
*Average forward current of centertap full wave connection  
Electrical characteristics (Ta=25°C Unless otherwise specified )  
Item  
Symbol  
VFM  
Unit  
V
Max.  
1.3  
Conditions  
IFM=8.0A  
Forward voltage drop  
Reverse current  
IRRM  
mA  
µs  
0.1  
VR=VRRM  
Reverse recovery time  
Thermal resistance  
t rr  
0.4  
IF=0.1A, IR=0.1A  
Junction to case  
Rth(j-c)  
°C/W  
2.5*  

与ESAD25M-04C相关器件

型号 品牌 获取价格 描述 数据表
ESAD25M-04D FUJI

获取价格

Rectifier Diode, 1 Phase, 2 Element, 15A, 400V V(RRM), Silicon, FULL PACK-3
ESAD25MC FUJI

获取价格

FAST RECOVERY DIODE
ESAD25MD FUJI

获取价格

FAST RECOVERY DIODE
ESAD25MN FUJI

获取价格

FAST RECOVERY DIODE
ESAD25N FUJI

获取价格

FAST RECOVERY DIODE
ESAD33 FUJI

获取价格

FAST RECOVERY DIODE
ESAD33-02C FUJI

获取价格

FAST RECOVERY DIODE
ESAD33-02CS FUJI

获取价格

Rectifier Diode, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, SC-65, 3 PIN
ESAD33-02D FUJI

获取价格

FAST RECOVERY DIODE
ESAD33-02N FUJI

获取价格

FAST RECOVERY DIODE