Datasheet > ES3GBF

ES3GBF

更新时间： 2024-03-03 10:08:35

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
5页	253K
描述
SMBF

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数据手册

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ES3GBF 数据手册

ES3ABF THRU ES3KBF

（T =25℃ Unless otherwise specified）

■Electrical Characteristics

TEST

ES3ABFES3BBFES3CBFES3DBFES3FBFES3GBFES3HBFES3JBFES3KBF

PARAMETER

SYMBOL

UNIT

CONDITIONS

Maximum instantaneous

forward voltage drop per diode

IFM=3.0A

0.95

1.3

1.7

1.85

IF=0.5A,IR=1.0A,

Irr=0.25A

Maximum reverse recovery time

t_rr

Tj =25℃

Maximum DC reverse current at

rated DC blocking voltage per

diode

μA

100

Tj =125℃

Thermal Characteristics （T =25℃ Unless otherwise specified）

■

ES3ABF ES3BBF ES3CBF ES3DBF ES3FBF ES3GBF ES3HBF ES3JBF ES3KBF

PARAMETER

SYMBOL

UNIT

(1)

R_θJ-A

(1)

Typical Thermal Resistance

R_θJ-L

℃/W

(1)

R_θJ-C

Note:

(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad areas

Characteristics (Typical)

■

FIG1：Io‐TL Curve

FIG2：Surge Forward Current Capability

3.5

120

3.0

100

8.3ms Single Half Sine Wave

2.5

2.0

1.5

1.0

Resistive or Inductive Load

P.C.B. Mounted on 0.3"×0.3"

(8.0mm×8.0mm)Copper Pad Areas

0.5

100

125

150

100

Number of Cycles

Lead Temperature(℃)

2 / 5

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-S4106

Rev. 1.0, 18-Oct-21

www.21yangjie.com

123 4 5

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