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ES3AE3 PDF预览

ES3AE3

更新时间: 2024-11-24 19:45:59
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线光电二极管
页数 文件大小 规格书
4页 305K
描述
DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN, Rectifier Diode

ES3AE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AB
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.57
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:0.03 µs表面贴装:YES
端子面层:MATTE TIN端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

ES3AE3 数据手册

 浏览型号ES3AE3的Datasheet PDF文件第2页浏览型号ES3AE3的Datasheet PDF文件第3页浏览型号ES3AE3的Datasheet PDF文件第4页 
ES3A thru ES3D  
Vishay General Semiconductor  
Surface Mount Ultrafast Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
3.0 A  
50 V to 200 V  
100 A  
20 ns  
VF  
0.90 V  
Tj max.  
150 °C  
DO-214AB (SMC)  
Features  
Mechanical Data  
• Glass passivated chip junction  
Case: DO-214AB (SMC)  
• Ideal for automated placement  
Epoxy meets UL 94V-0 Flammability rating  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power losses  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in high frequency rectification and freewheel-  
ing application in switching mode converters and  
inverters for consumer, computer and Telecommuni-  
cation  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Device marking code  
Symbol  
ES3A  
EA  
ES3B  
EB  
ES3C  
EC  
ES3D  
ED  
Unit  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
100  
150  
200  
V
V
V
A
A
Maximum RMS voltage  
35  
50  
70  
105  
150  
140  
200  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current at TL = 100 °C  
IF(AV)  
IFSM  
3.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
100  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number 88589  
28-Jul-05  
www.vishay.com  
1

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