ES3AF THRU ES3JF
Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere
SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER
Features
SMAF
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
0.106(2.70)
0.094(2.40)
0.063 (1.60)
0.051 (1.30)
Built-in strain relief,ideal for automated
placement High forward surge current capability
High temperature soldering guaranteed:
250°C/10 seconds at terminals
0.146(3.70)
0.130(3.30)
Glass passivated chip junction
0.047(1.20)
0.035(0.90)
0.008(0.20)
0.005(0.12)
0.047(1.20)
0.031(0.80)
Mechanical Data
0.193(4.90)
0.173(4.40)
Case : JEDEC SMAF Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position: Any
Dimensions in inches and (millimeters)
Weight
: 0.00095 ounce, 0.027 grams
Maximum Ratings And Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
ES3AF ES3BF ES3CF ES3DF ES3EF ES3GF ES3JF
SYMBOLS
UNITS
MDD
MDD
MDD
MDD
MDD
MDD
MDD
Marking Code
ES3AF ES3BF ES3CF ES3DF ES3EF ES3GF ES3JF
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
RMM
RMS
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
V
V
V
V
Maximum DC blocking voltage
V
DC
100
I
(AV)
Maximum average forward rectified current
3.0
80
A
A
at TL=55
℃
Peak forward surge current
8.3ms single half sine-wave
superimposed onrated load (JEDEC Method)
I
FSM
Maximum instantaneous forward voltage at 3.0A
V
F
1
1.25
1.68
V
I
R
5.0
100.0
Maximum DC reverse current
at rated DCblocking voltage
T
A
=25
TA=125℃
(NOTE 1)
℃
μA
t
rr
Maximum reverserecovery time
35
ns
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
C
J
40.0
50.0
pF
R
JA
℃/
W
℃
Operating junction and storage temperature range
T
J,
T
STG
-55 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
4.The typical data above is for referenceonly.
DN:T19712A0
https://www.microdiode.com
Rev:2019A0
Page :1