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ES2JR5 PDF预览

ES2JR5

更新时间: 2024-11-02 01:20:15
品牌 Logo 应用领域
TSC 功效光电二极管
页数 文件大小 规格书
4页 384K
描述
Surface Mount Super Fast Rectifiers

ES2JR5 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5Is Samacsys:N
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:600 V最大反向电流:10 µA
最大反向恢复时间:0.035 µs表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

ES2JR5 数据手册

 浏览型号ES2JR5的Datasheet PDF文件第2页浏览型号ES2JR5的Datasheet PDF文件第3页浏览型号ES2JR5的Datasheet PDF文件第4页 
ES2A thru ES2J  
Taiwan Semiconductor  
CREAT BY ART  
Surface Mount Super Fast Rectifiers  
FEATURES  
- Glass passivated junction chip  
- Ideal for automated placement  
- Low profile package  
- Super fast recovery time for high efficiency  
- Moisture sensitivity level: level 1, per J-STD-020  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
MECHANICAL DATA  
Case: DO-214AA (SMB)  
DO-214AA (SMB)  
Molding compound, UL flammability classification rating 94V-0  
Base P/N with suffix "G" on packing code - green compound (halogen-free)  
Base P/N with prefix "H" on packing code - AEC-Q101 qualified  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test  
with prefix "H" on packing code meet JESD 201 class 2 whisker test  
Polarity: Indicated by cathode band  
Weight: 0.09 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
ES  
2A  
50  
ES  
2B  
100  
70  
ES  
2C  
150  
105  
150  
ES  
2D  
200  
140  
200  
ES  
2F  
300  
210  
300  
ES  
2G  
400  
280  
400  
ES  
2H  
500  
350  
500  
ES  
2J  
600  
420  
600  
PARAMETER  
SYMBOL  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
35  
Maximum DC blocking voltage  
50  
100  
Maximum average forward rectified current  
IF(AV)  
2
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
VF  
IR  
50  
A
V
Maximum instantaneous forward voltage (Note 1)  
@ 2 A  
0.95  
1.3  
1.7  
10  
350  
35  
Maximum reverse current @ rated VR TJ=25 ℃  
TJ=125 ℃  
μA  
Maximum reverse recovery time (Note 2)  
Typical junction capacitance (Note 3)  
Trr  
Cj  
ns  
25  
20  
pF  
RθJL  
RθJA  
20  
75  
OC/W  
Typical thermal resistance  
OC  
OC  
Operating junction temperature range  
Storage temperature range  
TJ  
- 55 to +150  
- 55 to +150  
TSTG  
Note 1: Pulse test with PW=300μs, 1% duty cycle  
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.  
Document Number: DS_D1405037  
Version: H14  

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