Datasheet > ES1G

ES1G

更新时间： 2024-11-29 11:11:07

品牌	Logo	应用领域
安森美 - ONSEMI		光电二极管
页数	文件大小	规格书
4页	163K
描述
1.0A快速恢复整流器

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中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

ES1G 数据手册

Fast Rectifiers

ES1F-ES1J

Features

• For Surface Mount Applications

• Glass Passivated Junction

• Low Profile Package

www.onsemi.com

• Easy Pick and Place

• Built-in Strain Relief

• Superfast Recovery Times for High Efficiency

CATHODE

ANODE

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Value

SMA (DO−214AC)

Color Band Denotes Cathode

CASE 403AE

ES1F ES1G ES1H ES1J

300 400 500 600

Symbol

Parameter

Unit

RRM

Maximum Repetitive

Reverse Voltage

ORDERING INFORMATION

Average Rectified

Forward Current

1.0

F(AV)

†

Device

Package

Shipping

Non-repetitive Peak

Forward Surge Current

8.3 ms Single

Half-Sine-Wave

(JEDEC method)

FSM

ES1F

ES1G

ES1H

ES1J

SMA

(Pb−Free)

7500 /

Tape & Reel

SMA

(Pb−Free)

7500 /

Tape & Reel

Operating Junction

Temperature Range

−55 to 150

1.47

°C

SMA

(Pb−Free)

7500 /

Tape & Reel

STG

Storage Temperature

Range

SMA

7500 /

(Pb−Free)

Tape & Reel

Power Dissipation

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Characteristics

Thermal Resistance, Junction−to−Ambient (Note 1)

Thermal Resistance, Junction−to−Case (Note 1)

Thermal Resistance, Junction−to−Lead (Note 1)

Value

Unit

°C/W

1. P. C. B mounted on 0.2″ × 0.2″ (5 × 5 mm) copper Pad Area.

ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)

Value

ES1F

ES1G

ES1H

ES1J

Symbol

Characteristics

Unit

Maximum Forward Voltage @ I = 1.0 A

1.3

1.7

Maximum Reverse Recovery Time,

I = 0.5 A, I = 1.0 A, I = 0.25 A

Maximum Reverse Current @ rated V

T = 25_C

5.0

100

T = 100_C

Typical Junction Capacitance, V = 4.0 V, f = 1.0 MHz

10.0

8.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Publication Order Number:

August, 2020 − Rev. 2

ES1J/D

12 3 4

中文翻译

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ES1G 替代型号

型号	品牌	替代类型	描述	数据表
ES1GE-TP	MCC	功能相似	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, S
ES1G-TP	MCC	功能相似	1 Amp Ultra Fast Recovery Silicon Rectifier 50 to 1000 Volts

与ES1G相关器件

型号	品牌	获取价格	描述	数据表
ES1G (ER1G)	HOTTECH	获取价格	SMA(DO-214AC)
ES1G(LS)	DIODES	获取价格	1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
ES1G-13	DIODES	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, PLASTIC, SMA, 2 PIN
ES1G-13-F	DIODES	获取价格	1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
ES1G-7	DIODES	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, PLASTIC, SMA, 2 PIN
ES1G-A	ANBON	获取价格	SMA
ES1GAF	CZSTARSEA	获取价格	SMAF
ES1G-A-Q1	ANBON	获取价格	SMA
ES1GAS	CZSTARSEA	获取价格	SMAS
ES1GB	PACELEADER	获取价格	SURFACE MOUNT SUPERFAST RECTIFIER

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