Datasheet > ES1G

ES1G

更新时间： 2024-02-02 18:23:56

品牌	Logo	应用领域
亞昕 - YEASHIN		二极管光电二极管
页数	文件大小	规格书
2页	41K
描述
SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

ES1G 技术参数

生命周期：	Active	包装说明：	O-PALF-W2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.55
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	O-PALF-W2
元件数量：	1	端子数量：	2
最大输出电流：	0.7 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
认证状态：	Not Qualified	最大反向恢复时间：	1.5 µs
表面贴装：	NO	端子形式：	WIRE
端子位置：	AXIAL	Base Number Matches：	1

ES1G 数据手册

DATA SHEET

SEMICONDUCTOR

ES1A~ES1J

SURFACE MOUNT SUPERFAST RECTIFIER

VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere

FEATURES

SMA/DO-214AC Unit:inch(mm)

• For surface mounted applications

• Low profile package

• Built-in strain relief

.062(1.60)

.047(1.20)

• Easy pick and place

• Superfast recovery times for high efficiency

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

• Glass passivated junction

.114(2.90)

.098(2.50)

(4.60)

.181

.157(4.00)

• High temperature soldering:

260 ^O/ 10 seconds at terminals

• High temperature soldering : 260^OC / 10 seconds at terminals

• Pb free product at available : 99% Sn above meet RoHS

environment substance directive request

096(2.44)

.078(2.00)

.012(.305)

.006(.152)

MECHANICAL DATA

)

.008(.203

.002(.051)

• Case: JEDEC DO-214AC molded plastic

• Terminals: Solder plated, solderable per

MIL-STD-750, Method 2026

.060(1.52)

.030(0.76)

.208(5.28)

.188(4.80)

• Polarity: Indicated by cathode band

• Standard packaging: 12mm tape (EIA-481)

• Weight: 0.002 ounce, 0.064 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^O

ambient temperature unless otherwise specified.

Single phase, half wave 60Hz resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOLS ES1A

ES1B

100

ES1C

150

ES1D

200

ES1E

ES1G

400

ES1J

UNITS

Volts

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

300

210

300

600

420

600

105

140

280

Maximum DC Blocking Voltage

100

150

200

400

Maximum Average Forward Rect ified Current ,

at TL=120

Volts

1.0

Amps

Peak Forward Surge Current 8.3ms single half

sinewave superimposed on rated load(JEDEC method)

Maximum Instantaneous Forward Voltage at 1.0A

Maximum DC Reverse Current TA=25°C

IFSM

30.0

Amps

Volts

0.95

1.25

1.7

5.0

100

°C

At Rated DC Blocking Voltage TA=100

TRR

Maximum Reverse Recovery Time (Note 1)

Typical Junction capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating and Storage Temperature Range

NOTES:

35.0

10.0

°C /W

°C

RθJA

TSTG

-55to +150

1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A

2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts

3. 8.0mm2 (.013mm thick) land areas

http://www.yeashin.com

REV.02 20110725

下载PDF

与ES1G相关器件

型号	品牌	描述	获取价格	数据表
ES1G(LS)	DIODES	1.0A SURFACE MOUNT SUPER-FAST RECTIFIER	获取价格
ES1G-13	DIODES	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, PLASTIC, SMA, 2 PIN	获取价格
ES1G-13-F	DIODES	1.0A SURFACE MOUNT SUPER-FAST RECTIFIER	获取价格
ES1G-7	DIODES	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, PLASTIC, SMA, 2 PIN	获取价格
ES1GAF	CZSTARSEA	SMAF	获取价格
ES1GAS	CZSTARSEA	SMAS	获取价格